NXP BAS 32L NXP Datasheet
BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011 Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
High switching speed: trr≤ 4ns
Reverse voltage: V
Repetitive peak reverse voltage: V
Repetitive peak forward current: I
Small hermetically sealed glass SMD package
≤ 75 V
R
RRM
FRM
≤ 100 V
≤ 450 mA
1.3 Applications
High-speed switching
Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
I
FRM
V
R
V
F
t
rr
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from I
forward current
repetitive peak forward
current
reverse voltage - - 75 V
forward voltage IF= 100 mA - - 1000 mV
reverse recovery time
= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA.
F
[1]
--200mA
--450mA
[2]
--4ns
NXP Semiconductors
0
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode
2 anode
[1] The marking band indicates the cathode.
3. Ordering information
Table 3. Ordering information
Type number Package
BAS32L - hermetically sealed glass surface-mounted package;
BAS32L
High-speed switching diode
[1]
ka
1
Name Description Version
2 connectors
2
006aab04
SOD80C
4. Marking
Table 4. Marking codes
Type number Marking code
BAS32L marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse
-100V
voltage
reverse voltage - 75 V
forward current
repetitive peak forward
[1]
-200mA
-450mA
current
non-repetitive peak forward
current
square wave
tp=1μs-4A
=1ms - 1 A
t
p
=1s - 0.5 A
t
p
[2]
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 2 of 11
NXP Semiconductors
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
=25°C prior to surge.
[2] T
j
total power dissipation T
junction temperature - 200 °C
ambient temperature −65 +200 °C
storage temperature −65 +200 °C
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
amb
in free air
=25°C
BAS32L
High-speed switching diode
[1]
-500mW
[1]
--350K/W
--300K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
t
rr
V
FR
[1] When switched from IF= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA.
[2] When switched from I
=25°C unless otherwise specified.
forward voltage IF=5mA 620- 750mV
= 100 mA - - 1000 mV
I
F
=100mA; Tj=100°C- - 930mV
I
F
reverse current VR=20V - - 25 nA
=75V - - 5 μA
V
R
=20V; Tj=150°C--50μA
V
R
=75V; Tj=150°C--100μA
V
R
diode capacitance VR=0V; f=1MHz - - 2 pF
reverse recovery
time
forward recovery
voltage
=50mA; tr=20ns.
F
[1]
--4ns
[2]
--2.5V
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 3 of 11
NXP Semiconductors
BAS32L
High-speed switching diode
amb
mbg451
(°C)
300
I
F
(mA)
200
100
0
0 100 200
T
FR4 PCB, standard footprint (1) Tj= 175 °C; typical values
Fig 1. Forward current as a function of ambient
temperature; derating curve
mbg704
I
FSM
(A)
2
10
600
I
F
(mA)
400
(1) (2) (3)
200
0
012
=25°C; typical values
(2) T
j
=25°C; maximum values
(3) T
j
mbg464
VF (V)
Fig 2. Forward current as a function of forward
voltage
mgd006
I
R
(μA)
3
10
2
10
10
1
−1
10
110
10 10
2
3
10
tp (μs)
4
Based on square wave currents.
=25°C prior to surge
T
j
Fig 3. Non-repetitive peak forward current as a
function of pulse duration; maximum values
10
1
−1
10
−2
10
0 100
(1) V
= 75 V; maximum values
R
= 75 V; typical values
(2) V
R
= 20 V; typical values
(3) V
R
(1) (2)
T
(°C)
j
(3)
200
Fig 4. Reverse current as a function of junction
temperature
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 4 of 11
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