NXP BAS 32L NXP Datasheet

BAS32L
High-speed switching diode
Rev. 7 — 20 January 2011 Product data sheet

1. Product profile

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.

1.2 Features and benefits

High switching speed: trr≤ 4nsReverse voltage: VRepetitive peak reverse voltage: VRepetitive peak forward current: ISmall hermetically sealed glass SMD package
75 V
R
RRM
FRM
100 V
450 mA

1.3 Applications

High-speed switchingReverse polarity protection

1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
I
FRM
V
R
V
F
t
rr
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from I
forward current repetitive peak forward
current reverse voltage - - 75 V forward voltage IF= 100 mA - - 1000 mV reverse recovery time
= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA.
F
[1]
--200mA
--450mA
[2]
--4ns
NXP Semiconductors
0

2. Pinning information

Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode 2 anode
[1] The marking band indicates the cathode.

3. Ordering information

Table 3. Ordering information
Type number Package
BAS32L - hermetically sealed glass surface-mounted package;
BAS32L
High-speed switching diode
[1]
ka
1
Name Description Version
2 connectors
2
006aab04
SOD80C

4. Marking

Table 4. Marking codes
Type number Marking code
BAS32L marking band

5. Limiting values

Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse
-100V
voltage reverse voltage - 75 V forward current repetitive peak forward
[1]
-200mA
-450mA
current non-repetitive peak forward
current
square wave
tp=1μs-4A
=1ms - 1 A
t
p
=1s - 0.5 A
t
p
[2]
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 2 of 11
NXP Semiconductors
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
=25°C prior to surge.
[2] T
j
total power dissipation T junction temperature - 200 °C ambient temperature −65 +200 °C storage temperature −65 +200 °C

6. Thermal characteristics

Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
amb
in free air
=25°C
BAS32L
High-speed switching diode
[1]
-500mW
[1]
--350K/W
--300K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
t
rr
V
FR
[1] When switched from IF= 10 mA to IR=10mA; RL= 100 Ω; measured at IR=1mA. [2] When switched from I
=25°C unless otherwise specified.
forward voltage IF=5mA 620- 750mV
= 100 mA - - 1000 mV
I
F
=100mA; Tj=100°C- - 930mV
I
F
reverse current VR=20V - - 25 nA
=75V - - 5 μA
V
R
=20V; Tj=150°C--50μA
V
R
=75V; Tj=150°C--100μA
V
R
diode capacitance VR=0V; f=1MHz - - 2 pF reverse recovery
time forward recovery
voltage
=50mA; tr=20ns.
F
[1]
--4ns
[2]
--2.5V
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 3 of 11
NXP Semiconductors
BAS32L
High-speed switching diode
amb
mbg451
(°C)
300
I
F
(mA)
200
100
0
0 100 200
T
FR4 PCB, standard footprint (1) Tj= 175 °C; typical values
Fig 1. Forward current as a function of ambient
temperature; derating curve
mbg704
I
FSM
(A)
2
10
600
I
F
(mA)
400
(1) (2) (3)
200
0
012
=25°C; typical values
(2) T
j
=25°C; maximum values
(3) T
j
mbg464
VF (V)
Fig 2. Forward current as a function of forward
voltage
mgd006
I
R
(μA)
3
10
2
10
10
1
1
10
110
10 10
2
3
10
tp (μs)
4
Based on square wave currents.
=25°C prior to surge
T
j
Fig 3. Non-repetitive peak forward current as a
function of pulse duration; maximum values
10
1
1
10
2
10
0 100
(1) V
= 75 V; maximum values
R
= 75 V; typical values
(2) V
R
= 20 V; typical values
(3) V
R
(1) (2)
T
(°C)
j
(3)
200
Fig 4. Reverse current as a function of junction
temperature
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 4 of 11
NXP Semiconductors
2
BAS32L
High-speed switching diode
1.2
C
d
(pF)
1.0
0.8
0.6
0.4 01020
VR (V)
f=1MHz; Tj=25°C
Fig 5. Diode capacitance as a function of reverse voltage; typical values

8. Test information

mgd004
D.U.T.
I
RS = 50 Ω
V = V
R + IF × RS
F
SAMPLING
OSCILLOSCOPE
= 50 Ω
R
i
mga881
V
R
Input signal: Reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ≤0.05 Oscilloscope: Rise time t
=1mA
(1) I
R
=0.35ns
r
Fig 6. Reverse recovery time test circuit and waveforms
I
RS = 50 Ω
1 kΩ 450 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
10 %
t
r
t
r
10 %
90 %
90 %
input signal
t
p
input signal
t
p
t
+ I
F
V
V
FR
t
t
rr
output signal
output signal
t
(1)
t
mga88
Input signal: Forward pulse rise time tr= 20 ns; forward current pulse duration tp≥ 100 ns; duty factor δ≤0.005
Fig 7. Forward recovery voltage test circuit and waveforms
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 5 of 11
NXP Semiconductors

9. Package outline

BAS32L
High-speed switching diode
Fig 8. Package outline SOD80C

10. Packing information

Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
BAS32L SOD80C 4 mm pitch, 8 mm tape and reel -115 -135
[1] For further information and the availability of packing methods, see Section 14.
0.3
3.7
3.3
0.3
1.60
1.45
06-03-16Dimensions in mm
[1]
2500 10000
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 6 of 11
NXP Semiconductors

11. Soldering

Fig 9. Reflow soldering footprint SOD80C
BAS32L
High-speed switching diode
4.55
4.30
2.30
solder lands
solder paste
1.601.702.25
0.90 (2x)
6.30
4.90
2.70
1.90
sod080c
solder resist
occupied area
Dimensions in mm
1.702.90
Fig 10. Wave soldering footprint SOD80C
solder lands
solder resist
occupied area
tracks
Dimensions in mm
sod080c
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 7 of 11
NXP Semiconductors
BAS32L
High-speed switching diode

12. Revision history

Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS32L v.7 20110120 Product data sheet - BAS32L v.6 Modifications:
BAS32L v.6 20081029 Product data sheet - BAS32L v.5 BAS32L v.5 20080103 Product data sheet - BAS32L v.4 BAS32L v.4 20050322 Product data sheet - BAS32L v.3 BAS32L v.3 20020123 Product specification - BAS32L v.2 BAS32L v.2 19960910 Product specification - BAS32L v.1 BAS32L v.1 19960423 Product specification - -
Table 4 “Marking codes”: amended
Section 13 “Legal information”: updated
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 8 of 11
NXP Semiconductors
BAS32L
High-speed switching diode

13. Legal information

13.1 Data sheet status

Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
, unless otherwise
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 9 of 11
NXP Semiconductors
BAS32L
High-speed switching diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

13.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS32L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 20 January 2011 10 of 11
NXP Semiconductors

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information . . . . . . . . . . . . . . . . . . . . . 6
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BAS32L
High-speed switching diode
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 January 2011
Document identifier: BAS32L
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