NXP BAS 21 NXP Datasheet

DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product data sheet Supersedes data of 1999 May 26
2003 Mar 20
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21

FEATURES

Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 100 V; 150 V; 200 V
Repetitive peak reverse voltage: max. 120 V; 200 V;
V
250
Repetitive peak forward current: max. 625 mA.

APPLICATIONS

General purpose switching in e.g. surface mounted circuits.

DESCRIPTION

The BAS19, BAS20 and BAS21 are general purpose diodes fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package.

MARKING

T YPE NUMBER MARKING CODE
(1)
BAS19 JP BAS20 JR BAS21 JS

PINNING

PIN DESCRIPTION
1 anode 2 not connected 3 cathode
handbook, halfpage
21
2
n.c.
3
Fig.1 Simplified outline (SOT23) and symbol.
1
3
MAM185
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia. = W: Made in China.
2003 Mar 20 2
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
P T T
RRM
R
tot stg j
repetitive peak reverse voltage
BAS19 120 V BAS20 200 V BAS21 250 V
continuous reverse voltage
BAS19 100 V BAS20 150 V
BAS21 200 V continuous forward current see Fig.2; note 1 200 mA repetitive peak forward current 625 mA non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see
Fig.4 t = 1 µs 9 A t = 100 µs 3 A t = 10 ms 1.7 A
total power dissipation T
= 25 °C; note 1 250 mW
amb
storage temperature −65 +150 °C junction temperature 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20 3
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
IF = 100 mA 1 V IF = 200 mA 1.25 V
reverse current see Fig.5
BAS19 VR = 100 V 100 nA
VR = 100 V; Tj = 150 °C 100 µA
BAS20 VR = 150 V 100 nA
VR = 150 V; Tj = 150 °C 100 µA
BAS21 VR = 200 V 100 nA
VR = 200 V; Tj = 150 °C 100 µA
diode capacitance f = 1 MHz; VR = 0; see Fig.6 5 pF reverse recovery time when switched from IF = 30 mA to
= 30 mA; RL = 100 ; measured at
I
R
= 3 mA; see Fig.8
I
R
50 ns

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th j-tp th j-a
thermal resistance from junction to tie-point 330 K/W thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20 4
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21

GRAPHICAL DATA

amb
MBG442
(oC)
300
handbook, halfpage
I
F
(mA)
200
100
0
0 100 200
Device mounted on an FR4 printed-circuit board.
T
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
600
handbook, halfpage
I
F
(mA)
400
200
0
02
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
(1) (3)(2)
1
MBG384
VF (V)
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
1
10
1
Based on square wave currents. T
= 25 °C prior to surge.
j
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG703
10
2
10
3
10
tp (µs)
4
10
2003 Mar 20 5
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
2
10
handbook, halfpage
I
R
(µA)
10
1
1
10
2
10
0
(1) VR = V (2) VR = V
(1) (2)
; maximum values.
Rmax
; typical values.
Rmax
100
Tj (
MBG381
o
C)
Fig.5 Reverse current as a function of junction
temperature.
200
1.0
handbook, halfpage
C
d
(pF)
0.8
0.6
0.4
0.2 04862
f = 1 MHz; Tj = 25 °C.
MBG447
VR (V)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
amb
MBG445
(oC)
300
handbook, halfpage
V
R
(V)
200
100
0
0 100 200
(1) BAS21. (2) BAS20. (3) BAS19.
(1)
(2)
(3)
T
Fig.7 Maximum permissible continuous reverse
voltage as a function of the ambient temperature.
2003 Mar 20 6
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21
handbook, full pagewidth
R = 50
S
V = V I x R
RF S
(1) IR = 3 mA.
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50
i
MGA881
t
r
10%
V
R
90%
t
p
input signal
Fig.8 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
2003 Mar 20 7
NXP Semiconductors Product data sheet
3
General purpose diodes BAS19; BAS20; BAS21

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
1
A
max.
0.48
0.1
0.38
cD
b
p
0.15
0.09
IEC JEDEC EIAJ
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
1
0.95
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28 99-09-13
2003 Mar 20 8
NXP Semiconductors Product data sheet
General purpose diodes BAS19; BAS20; BAS21

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
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(1)
PRODUCT STATUS
(2)
DEFINITION
development.
the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC
2003 Mar 20 9
60134) may cause permanent damage to
Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccur ate a nd re li a ble and may be change d without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industri al or intellectual property righ ts.
Printed in The Netherlands 613514/04/pp10 Date of release: 2003 Mar 20 Document order number: 9397 750 10961
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