NXP BAS 21 NXP Datasheet

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D088

BAS19; BAS20; BAS21

General purpose diodes

Product data sheet
Supersedes data of 1999 May 26

2003 Mar 20

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

FEATURES

• Small plastic SMD package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage: max. 100 V; 150 V; 200 V

• Repetitive peak reverse voltage: max. 120 V; 200 V;

V

250

• Repetitive peak forward current: max. 625 mA.

APPLICATIONS

• General purpose switching in e.g. surface mounted
circuits.

DESCRIPTION

The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.

MARKING

T YPE NUMBER MARKING CODE

(1)

BAS19 JP∗
BAS20 JR∗
BAS21 JS∗

PINNING

PIN DESCRIPTION

1 anode
2 not connected
3 cathode

handbook, halfpage

21

2

n.c.

3

Fig.1 Simplified outline (SOT23) and symbol.

1

3

MAM185

Note

1. ∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.
∗ = W: Made in China.

2003 Mar 20 2

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

V

I

F

I

FRM

I

FSM

P
T
T

RRM

R

tot
stg
j

repetitive peak reverse voltage

BAS19 − 120 V
BAS20 − 200 V
BAS21 − 250 V

continuous reverse voltage

BAS19 − 100 V
BAS20 − 150 V

BAS21 − 200 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj = 25 °C prior to

surge; see

Fig.4
t = 1 µs − 9 A
t = 100 µs − 3 A
t = 10 ms − 1.7 A

total power dissipation T

= 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

2003 Mar 20 3

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

I

R

C

d

t

rr

forward voltage see Fig.3

IF = 100 mA 1 V
IF = 200 mA 1.25 V

reverse current see Fig.5

BAS19 VR = 100 V 100 nA

VR = 100 V; Tj = 150 °C 100 µA

BAS20 VR = 150 V 100 nA

VR = 150 V; Tj = 150 °C 100 µA

BAS21 VR = 200 V 100 nA

VR = 200 V; Tj = 150 °C 100 µA

diode capacitance f = 1 MHz; VR = 0; see Fig.6 5 pF
reverse recovery time when switched from IF = 30 mA to

= 30 mA; RL = 100 Ω; measured at

I

R

= 3 mA; see Fig.8

I

R

50 ns

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

2003 Mar 20 4

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

GRAPHICAL DATA

amb

MBG442

(oC)

300

handbook, halfpage

I

F

(mA)

200

100

0

0 100 200

Device mounted on an FR4 printed-circuit board.

T

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

600

handbook, halfpage

I

F

(mA)

400

200

0

02

(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.

(1) (3)(2)

1

MBG384

VF (V)

Fig.3 Forward current as a function of forward

voltage.

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
T

= 25 °C prior to surge.

j

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG703

10

2

10

3

10

tp (µs)

4

10

2003 Mar 20 5

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

2

10

handbook, halfpage

I

R

(µA)

10

1

1

10

2

10

0

(1) VR = V
(2) VR = V

(1) (2)

; maximum values.

Rmax

; typical values.

Rmax

100

Tj (

MBG381

o

C)

Fig.5 Reverse current as a function of junction

temperature.

200

1.0

handbook, halfpage

C

d

(pF)

0.8

0.6

0.4

0.2
04862

f = 1 MHz; Tj = 25 °C.

MBG447

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

amb

MBG445

(oC)

300

handbook, halfpage

V

R

(V)

200

100

0

0 100 200

(1) BAS21.
(2) BAS20.
(3) BAS19.

(1)

(2)

(3)

T

Fig.7 Maximum permissible continuous reverse

voltage as a function of the ambient
temperature.

2003 Mar 20 6

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

handbook, full pagewidth

R = 50

Ω

S

V = V I x R

RF S

(1) IR = 3 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

Ω

R = 50

i

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.8 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

2003 Mar 20 7

NXP Semiconductors Product data sheet

3

General purpose diodes BAS19; BAS20; BAS21

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

1

A

max.

0.48

0.1

0.38

cD

b

p

0.15

0.09

IEC JEDEC EIAJ

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

1

0.95

H

2.5

2.1

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2003 Mar 20 8

NXP Semiconductors Product data sheet

General purpose diodes BAS19; BAS20; BAS21

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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does not give any representations or warranties,
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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accepts no liability for inclusion and/or use of NXP
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(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC

2003 Mar 20 9

60134) may cause permanent damage to

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

NXP Semiconductors

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Printed in The Netherlands 613514/04/pp10 Date of release: 2003 Mar 20 Document order number: 9397 750 10961