NXP BAS 16J NXP Datasheet

High-speed switching diodes
Rev. 05 — 25 August 2008 Product data sheet
1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number Package Configuration Package
BAS16 SOT23 - TO-236AB single small BAS16H SOD123F - - single small and flat lead BAS16J SOD323F SC-90 - single very small and flat
BAS16L SOD882 - - single leadless ultra
BAS16T SOT416 SC-75 - single ultra small BAS16VV SOT666 - - triple isolated ultra small andflat
BAS16VY SOT363 SC-88 - triple isolated very small BAS16W SOT323 SC-70 - single very small BAS316 SOD323 SC-76 - single very small BAS516 SOD523 SC-79 - single ultra small and flat
NXP JEITA JEDEC
configuration
lead
small
lead
lead

1.2 Features

n High switching speed: trr≤ 4ns n Low capacitance n Low leakage current n Reverse voltage: VR≤ 100 V n Repetitive peak reverse voltage:
V
100 V
RRM
n Small SMD plastic packages

1.3 Applications

n High-speed switching n General-purpose switching
NXP Semiconductors

1.4 Quick reference data

Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
R
I
R
t
rr
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 ; measured at IR= 1 mA.

2. Pinning information

Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAS16; BAS16T; BAS16W
1 anode 2 not connected 3 cathode
BAS16 series
High-speed switching diodes
reverse voltage - - 100 V reverse current VR= 80 V - - 0.5 µA reverse recovery time
[1]
--4ns
3
3
12
006aaa764
BAS16H; BAS16J; BAS316; BAS516
1 cathode 2 anode
BAS16L
1 cathode 2 anode
BAS16VV; BAS16VY
1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1)
12
006aaa144
[1]
12
001aab540
[1]
21
Transparent
top view
6 45
1 32
001aab555
1
1
6254
13
2
006aab040
2
006aab040
006aab106
[1] The marking bar indicates the cathode.
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 2 of 20
NXP Semiconductors

3. Ordering information

Table 4. Ordering information
Type number Package
BAS16 - plastic surface-mounted package; 3 leads SOT23 BAS16H - plastic surface-mounted package; 2 leads SOD123F BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F BAS16L - leadless ultra small plastic package; 2 terminals;
BAS16T SC-75 plastic surface-mounted package; 3 leads SOT416 BAS16VV - plastic surface-mounted package; 6 leads SOT666 BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363 BAS16W SC-70 plastic surface-mounted package; 3 leads SOT323 BAS316 SC-76 plastic surface-mounted package; 2 leads SOD323 BAS516 SC-79 plastic surface-mounted package; 2 leads SOD523
BAS16 series
High-speed switching diodes
Name Description Version
SOD882
body 1.0 × 0.6 × 0.5 mm

4. Marking

Table 5. Marking codes
Type number Marking code
BAS16 A6* BAS16H A1 BAS16J AR BAS16L S2 BAS16T A6 BAS16VV 53 BAS16VY 16* BAS16W A6* BAS316 A6 BAS516 6
[1] * = -: made in Hong Kong
* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
[1]
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 3 of 20
NXP Semiconductors

5. Limiting values

Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
BAS16 series
High-speed switching diodes
repetitive peak reverse voltage
reverse voltage - 100 V forward current
BAS16 BAS16H
BAS16L BAS16T BAS16VV
BAS16VY BAS16W BAS16J
BAS316 BAS516
repetitive peak forward current
non-repetitive peak forward current
tp≤ 0.5 µs; δ≤0.25
square wave
tp=1µs-4A
=1ms - 1 A
t
p
= 1 s - 0.5 A
t
p
total power dissipation
BAS16 T BAS16H T
BAS16J T
BAS16L T
BAS16T T BAS16VV T
BAS16VY T
BAS16W T BAS316 T BAS516 T
amb amb
amb
amb
90 °C
sp amb
85 °C
sp
amb
90 °C
sp
90 °C
sp
25 °C25 °C
25 °C
25 °C
25 °C
25 °C
- 100 V
[1]
- 215 mA
[2]
- 215 mA
[1]
- 155 mA
[1][3]
- 200 mA
[1]
- 175 mA
[1]
- 250 mA
- 500 mA
[4]
[1]
- 250 mW
[2][5]
- 380 mW
[6]
[5][6]
- 830 mW
[7]
[5][6]
- 550 mW
[7]
[2][5]
- 250 mW
[6] [1]
- 170 mW
[1][3]
- 180 mW
[5][8] [1][3]
- 250 mW
[8] [1]
- 200 mW
[1][6]
- 400 mW
[1][5]
- 500 mW
[6]
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 4 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. [2] Device mounted on an FR4 PCB with 60 µm copper strip line. [3] Single diode loaded. [4] Tj=25°C prior to surge. [5] Reflow soldering is the only recommended soldering method. [6] Soldering point of cathode tab. [7] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [8] Soldering points at pins 4, 5 and 6.
junction temperature - 150 °C ambient temperature 65 +150 °C storage temperature 65 +150 °C

6. Thermal characteristics

Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
R
th(j-a)
th(j-t)
thermal resistance from junction to ambient
BAS16 BAS16H
BAS16J BAS16L BAS16VV
BAS16W
thermal resistance from junction to tie-point
BAS16 - - 330 K/W BAS16W - - 300 K/W
…continued
in free air
[1]
- - 500 K/W
[2][3]
- - 330 K/W
[3][4]
- - 150 K/W
[3][4]
- - 230 K/W
[2][3]
- - 500 K/W
[2][3]
- - 700 K/W
[5]
[3][4]
- - 410 K/W
[5] [1]
- - 625 K/W
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 5 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 µm copper strip line. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Single diode loaded. [6] Soldering point of cathode tab. [7] Soldering points at pins 4, 5 and 6.

7. Characteristics

…continued
thermal resistance from junction to solder point
[6]
BAS16H BAS16J
--70K/W
[6]
--55K/W
BAS16T - - 350 K/W
[5][7]
BAS16VY BAS316 BAS516
- - 260 K/W
[6]
- - 150 K/W
[6]
- - 120 K/W
Table 8. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
IF= 1 mA - - 715 mV
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
= 150 mA - - 1.25 V
I
F
I
R
C
d
reverse current VR=25V --30nA
= 80 V - - 0.5 µA
V
R
= 25 V; Tj= 150 °C --30µA
V
R
= 80 V; Tj= 150 °C --50µA
V
R
diode capacitance f = 1 MHz; VR=0V
BAS16; BAS16H;
- - 1.5 pF BAS16J; BAS16L; BAS16T; BAS16VV; BAS16VY; BAS16W; BAS316
BAS516 - - 1 pF
t
rr
V
FR
[1] Pulse test: tp≤ 300 µs; δ≤0.02. [2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 ; measured at IR= 1 mA. [3] When switched from IF= 10 mA; tr=20ns.
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 6 of 20
reverse recovery time forward recovery voltage
[2]
--4ns
[3]
- - 1.75 V
NXP Semiconductors
BAS16 series
High-speed switching diodes
3
10
I
F
(mA)
2
10
10
1
1
10
0 1.41.00.4 0.80.2 1.20.6
(1) T (2) T (3) T (4) T
amb amb amb amb
= 150 °C =85°C =25°C = 40 °C
(1) (2) (3) (4)
006aab132
VF (V)
Fig 1. Forward current as a function of forward
voltage; typical values
2
10
I
FSM
(A)
10
1
1
10
110
10 10
2
mbg704
3
10
tp (µs)
4
Based on square wave currents. Tj=25°C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
10
I
R
(µA)
10
10
10
10
10
(1) T (2) T (3) T (4) T
2
10
1
1
2
3
4
5
0 1008040 6020
amb amb amb amb
(1)
(2)
(3)
(4)
= 150 °C =85°C =25°C = 40 °C
006aab133
(V)
V
R
Fig 3. Reverse current as a function of reverse
voltage; typical values
0.8
C
d
(pF
)
0.6
0.4
0.2
0
0816124
f = 1 MHz; T
amb
=25°C
mbg446
VR (V)
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 7 of 20
NXP Semiconductors

8. Test information

BAS16 series
High-speed switching diodes
D.U.T.
I
RS = 50
V = V
R + IF × RS
F
SAMPLING
OSCILLOSCOPE
= 50
R
i
mga881
V
R
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr= 0.35 ns
Fig 5. Reverse recovery time test circuit and waveforms
I
RS = 50
1 k 450
D.U.T.
OSCILLOSCOPE
Ri = 50
I
10 %
t
r
t
r
10 %
90 %
90 %
input signal
t
p
input signal
t
p
t
+ I
F
V
V
FR
t
t
rr
output signal
output signal
t
(1)
t
mga882
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥ 100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms

9. Package outline

1.7
1.5
0.70
0.55
1
0.55
0.35
2
2.5
2.1
3.0
2.8
3
0.45
0.15
1.4
1.2
12
0.48
1.9
0.38
1.1
0.9
0.15
0.09
3.6
2.7
3.4
2.5
04-11-04Dimensions in mm
Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F)
1.2
1.0
0.25
0.10 04-11-29Dimensions in mm
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 8 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
0.5
0.3
0.80
0.65
0.25
0.10
0.62
0.55
0.55
0.47
2
0.65
1
cathode marking on top side
0.30
0.22
0.30
0.22
04-09-13Dimensions in mm
0.50
0.46
2.7
2.3
1.8
1.6
1.35
1.15
1
2
0.40
0.25
Fig 9. Package outline BAS16J (SOD323F/SC-90) Fig 10. Package outline BAS16L (SOD882)
1.7
1.5
456
0.3
0.1
1.75
1.45
0.9
0.7
1.8
1.4
0.95
0.60
3
0.45
0.15
1.7
1.5
1.3
1.1 pin 1 index
0.6
0.5
1.02
0.95
03-04-17Dimensions in mm
12
0.30
1
0.15
0.25
0.10
04-11-04Dimensions in mm
Dimensions in mm
123
0.5 1
0.27
0.17
0.18
0.08
04-11-08
Fig 11. Package outline BAS16T (SOT416/SC-75) Fig 12. Package outline BAS16VV (SOT666)
2.2
2.0
1.35
1.15
2.2
1.8
pin 1 index
132
0.65
1.3
0.45
465
0.15
0.3
0.2
1.1
0.8
0.25
0.10
2.2
1.8
0.4
0.3
0.45
0.15
3
2.2
1.35
2.0
1.15
12
1.3
06-03-16Dimensions in mm
1.1
0.8
0.25
0.10
04-11-04Dimensions in mm
Fig 13. Package outline BAS16VY (SOT363) Fig 14. Package outline BAS16W (SOT323/SC-70)
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 9 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
0.65
0.58
0.17
0.11 02-12-13Dimensions in mm
2.7
2.3
1.8
1.6
1.35
1.15
1.1
0.8
1
2
0.40
0.25
0.45
0.15
0.25
0.10
1.65
1.25
1.55
1.15
03-12-17Dimensions in mm
0.85
0.75
0.34
0.26
1
2
Fig 15. Package outline BAS316 (SOD323/SC-76) Fig 16. Package outline BAS516 (SOD523/SC-79)

10. Packing information

Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
BAS16 SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235 BAS16H SOD123F 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS16J SOD323F 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS16L SOD882 2 mm pitch, 8 mm tape and reel - - - -315 BAS16T SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS16VV SOT666 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel - -115 - -
BAS16VY SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2 BAS16W SOT323 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS316 SOD323 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS516 SOD523 2 mm pitch, 8 mm tape and reel - - -315 -
4 mm pitch, 8 mm tape and reel -115 - - -135
[1]
3000 4000 8000 10000
[2]
-115 - - -135
[3]
-125 - - -165
[1] For further information and the availability of packing methods, seeSection14. [2] T1: normal taping [3] T2: reverse taping
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 10 of 20
NXP Semiconductors

11. Soldering

BAS16 series
High-speed switching diodes
3.3
2.9
1.9
solder lands
3
1.7
0.7
(3×)
0.5
(3×)
0.6
(3×)
1
2
0.6
(3×)
Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
solder lands
4.6
2.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
solder resist
occupied area
sot023_fw
Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB)
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 11 of 20
NXP Semiconductors
Fig 19. Reflow soldering footprint BAS16H (SOD123F)
4.4 4
2.9
1.6
1.6
1.1
(2×)
1.1 1.22.1
Reflow soldering is the only recommended soldering method. Dimensions in mm
3.05
2.2
2.1
BAS16 series
High-speed switching diodes
solder lands
solder resist
solder paste
occupied area
solder lands
0.951.65
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
Reflow soldering is the only recommended soldering method.
Fig 20. Reflow soldering footprint BAS16J (SOD323F)
solder resist
solder paste
occupied area
Dimensions in mm
sod323f_fr
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 12 of 20
NXP Semiconductors
1.3
0.7
BAS16 series
High-speed switching diodes
R0.05 (8×)
solder lands
0.6
0.9
0.3
(2×)
0.4
(2×)
(2×)
0.7
(2×)
Reflow soldering is the only recommended soldering method.
Fig 21. Reflow soldering footprint BAS16L (SOD882)
2.2
1.7
0.85
1
0.5
(3×)
solder resist
solder paste
occupied area
Dimensions in mm
sod882_fr
solder lands
solder resist
2
solder paste
occupied area
0.6
(3×)
1.3
Dimensions in mm
sot416_fr
Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75)
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 13 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
2.75
2.45
2.1
1.6
0.4
0.538
1.075
1.72
0.55 (2×)
0.45 (4×)
0.5
(4×)
1.7
0.6
(2×)
0.65 (2×)
(6×)
Reflow soldering is the only recommended soldering method.
Fig 23. Reflow soldering footprint BAS16VV (SOT666)
2.65
2.35
1.5
0.6
(4×)
0.5
(4×)
0.4 (2×)
0.25 (2×)
0.325 (4×)
0.3
(2×)
0.375 (4×)
solder lands
placement area
solder paste
occupied area
Dimensions in mm
sot666_fr
solder lands
solder resist
solder paste
1.8
0.6
(2×)
occupied area
Dimensions in mm
sot363_fr
0.5
(4×)
0.6
(4×)
Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88)
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 14 of 20
NXP Semiconductors
4.5
1.5
0.3
BAS16 series
High-speed switching diodes
solder lands
2.5 solder resist
1.5
1.3 1.3
2.45
5.3
Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88)
2.65
1.85
1.325
2
0.55 (3×)
3
1
1.3
0.5
(3×)
2.35
0.6
(3×)
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot363_fw
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot323_fr
Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70)
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 15 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
4.6
2.575
1.425 (3×)
solder lands
solder resist
occupied area
3.65 2.1
1.8
09
(2×)
Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70)
3.05
2.1
0.951.65
2.2
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sod323_fr
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 16 of 20
NXP Semiconductors
Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76)
2.75
1.2
(2×)
BAS16 series
High-speed switching diodes
5
2.9
1.5 (2×) solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sod323_fw
2.15
1.1
0.5
1.2
0.7
(2×)
0.8
(2×)
(2×)
0.6
(2×)
Reflow soldering is the only recommended soldering method.
Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sod523_fr
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 17 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes

12. Revision history

Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS16_SER_5 20080825 Product data sheet - BAS16_4
BAS16H_1 BAS16J_1 BAS16L_1 BAS16T_1 BAS16VV_BAS16VY_3 BAS16W_4 BAS316_4 BAS516_1
Modifications:
BAS16_4 20011010 Product specification - BAS16_3 BAS16H_1 20050415 Product data sheet - ­BAS16J_1 20070308 Product data sheet - ­BAS16L_1 20030623 Product specification - ­BAS16T_1 19980120 Product specification - ­BAS16VV_BAS16VY_3 20070420 Product data sheet - BAS16VV_BAS16VY_2 BAS16W_4 19990506 Product specification - BAS16W_3 BAS316_4 20040204 Product specification - BAS316_3 BAS516_1 19980831 Product specification - -
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5 “Marking codes”: marking code amended for BAS16W
Table 6 “Limiting values”: for BAS16, BAS16T, BAS16W and BAS516 change of
V
maximum value from 85 V to 100 V
RRM
Table 6 “Limiting values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of
V
maximum value from 75 V to 100 V
R
Table 8 “Characteristics”: change of I
Table 8 “Characteristics”: change of I
and T
=25°C
j
Table 8 “Characteristics”: change of I
condition VR from 75 V to 80 V for Tj=25°C
R
maximum value from 1.0 µAto0.5µA for VR=80V
R
condition VR from 75 V to 80 V for Tj= 150 °C
R
Section 13 “Legal information”: updated
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 18 of 20
NXP Semiconductors

13. Legal information

13.1 Data sheet status

BAS16 series
High-speed switching diodes
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
[1][2]
Product status
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or warranties, expressedor implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
[3]
http://www.nxp.com.
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyanceor implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands,product names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 19 of 20
NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
14 Contact information. . . . . . . . . . . . . . . . . . . . . 19
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
BAS16 series
High-speed switching diodes
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 August 2008
Document identifier: BAS16_SER_5
Loading...