BAS16 series
High-speed switching diodes
Rev. 05 — 25 August 2008 Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number Package Configuration Package
BAS16 SOT23 - TO-236AB single small
BAS16H SOD123F - - single small and flat lead
BAS16J SOD323F SC-90 - single very small and flat
BAS16L SOD882 - - single leadless ultra
BAS16T SOT416 SC-75 - single ultra small
BAS16VV SOT666 - - triple isolated ultra small andflat
BAS16VY SOT363 SC-88 - triple isolated very small
BAS16W SOT323 SC-70 - single very small
BAS316 SOD323 SC-76 - single very small
BAS516 SOD523 SC-79 - single ultra small and flat
NXP JEITA JEDEC
configuration
lead
small
lead
lead
1.2 Features
n High switching speed: trr≤ 4ns n Low capacitance
n Low leakage current n Reverse voltage: VR≤ 100 V
n Repetitive peak reverse voltage:
V
≤ 100 V
RRM
n Small SMD plastic packages
1.3 Applications
n High-speed switching
n General-purpose switching
NXP Semiconductors
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
R
I
R
t
rr
[1] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAS16; BAS16T; BAS16W
1 anode
2 not connected
3 cathode
BAS16 series
High-speed switching diodes
reverse voltage - - 100 V
reverse current VR= 80 V - - 0.5 µA
reverse recovery time
[1]
--4ns
3
3
12
006aaa764
BAS16H; BAS16J; BAS316; BAS516
1 cathode
2 anode
BAS16L
1 cathode
2 anode
BAS16VV; BAS16VY
1 anode (diode 1)
2 anode (diode 2)
3 anode (diode 3)
4 cathode (diode 3)
5 cathode (diode 2)
6 cathode (diode 1)
12
006aaa144
[1]
12
001aab540
[1]
21
Transparent
top view
6 45
1 32
001aab555
1
1
6254
13
2
006aab040
2
006aab040
006aab106
[1] The marking bar indicates the cathode.
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 2 of 20
NXP Semiconductors
3. Ordering information
Table 4. Ordering information
Type number Package
BAS16 - plastic surface-mounted package; 3 leads SOT23
BAS16H - plastic surface-mounted package; 2 leads SOD123F
BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F
BAS16L - leadless ultra small plastic package; 2 terminals;
BAS16T SC-75 plastic surface-mounted package; 3 leads SOT416
BAS16VV - plastic surface-mounted package; 6 leads SOT666
BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363
BAS16W SC-70 plastic surface-mounted package; 3 leads SOT323
BAS316 SC-76 plastic surface-mounted package; 2 leads SOD323
BAS516 SC-79 plastic surface-mounted package; 2 leads SOD523
BAS16 series
High-speed switching diodes
Name Description Version
SOD882
body 1.0 × 0.6 × 0.5 mm
4. Marking
Table 5. Marking codes
Type number Marking code
BAS16 A6*
BAS16H A1
BAS16J AR
BAS16L S2
BAS16T A6
BAS16VV 53
BAS16VY 16*
BAS16W A6*
BAS316 A6
BAS516 6
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
[1]
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 3 of 20
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
P
tot
BAS16 series
High-speed switching diodes
repetitive peak reverse
voltage
reverse voltage - 100 V
forward current
BAS16
BAS16H
BAS16L
BAS16T
BAS16VV
BAS16VY
BAS16W
BAS16J
BAS316
BAS516
repetitive peak forward
current
non-repetitive peak forward
current
tp≤ 0.5 µs;
δ≤0.25
square wave
tp=1µs-4A
=1ms - 1 A
t
p
= 1 s - 0.5 A
t
p
total power dissipation
BAS16 T
BAS16H T
BAS16J T
BAS16L T
BAS16T T
BAS16VV T
BAS16VY T
BAS16W T
BAS316 T
BAS516 T
amb
amb
amb
amb
≤ 90 °C
sp
amb
≤ 85 °C
sp
amb
≤ 90 °C
sp
≤ 90 °C
sp
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
- 100 V
[1]
- 215 mA
[2]
- 215 mA
[1]
- 155 mA
[1][3]
- 200 mA
[1]
- 175 mA
[1]
- 250 mA
- 500 mA
[4]
[1]
- 250 mW
[2][5]
- 380 mW
[6]
[5][6]
- 830 mW
[7]
[5][6]
- 550 mW
[7]
[2][5]
- 250 mW
[6]
[1]
- 170 mW
[1][3]
- 180 mW
[5][8]
[1][3]
- 250 mW
[8]
[1]
- 200 mW
[1][6]
- 400 mW
[1][5]
- 500 mW
[6]
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 4 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Single diode loaded.
[4] Tj=25°C prior to surge.
[5] Reflow soldering is the only recommended soldering method.
[6] Soldering point of cathode tab.
[7] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[8] Soldering points at pins 4, 5 and 6.
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
R
th(j-a)
th(j-t)
thermal resistance from
junction to ambient
BAS16
BAS16H
BAS16J
BAS16L
BAS16VV
BAS16W
thermal resistance from
junction to tie-point
BAS16 - - 330 K/W
BAS16W - - 300 K/W
…continued
in free air
[1]
- - 500 K/W
[2][3]
- - 330 K/W
[3][4]
- - 150 K/W
[3][4]
- - 230 K/W
[2][3]
- - 500 K/W
[2][3]
- - 700 K/W
[5]
[3][4]
- - 410 K/W
[5]
[1]
- - 625 K/W
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 5 of 20
NXP Semiconductors
BAS16 series
High-speed switching diodes
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Single diode loaded.
[6] Soldering point of cathode tab.
[7] Soldering points at pins 4, 5 and 6.
7. Characteristics
…continued
thermal resistance from
junction to solder point
[6]
BAS16H
BAS16J
--70K/W
[6]
--55K/W
BAS16T - - 350 K/W
[5][7]
BAS16VY
BAS316
BAS516
- - 260 K/W
[6]
- - 150 K/W
[6]
- - 120 K/W
Table 8. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
IF= 1 mA - - 715 mV
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
= 150 mA - - 1.25 V
I
F
I
R
C
d
reverse current VR=25V --30nA
= 80 V - - 0.5 µA
V
R
= 25 V; Tj= 150 °C --30µA
V
R
= 80 V; Tj= 150 °C --50µA
V
R
diode capacitance f = 1 MHz; VR=0V
BAS16; BAS16H;
- - 1.5 pF
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
BAS516 - - 1 pF
t
rr
V
FR
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
[2] When switched from IF= 10 mA to IR= 10 mA; RL= 100 Ω; measured at IR= 1 mA.
[3] When switched from IF= 10 mA; tr=20ns.
BAS16_SER_5 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 05 — 25 August 2008 6 of 20
reverse recovery time
forward recovery voltage
[2]
--4ns
[3]
- - 1.75 V
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