NXP 74AHC 1GU04GW Datasheet

74AHC1GU04

Inverter

Rev. 05 — 10 July 2007 Product data sheet

1. General description

The 74AHC1GU04 is a high-speed Si-gate CMOS device. It provides an inverting single
stage function.

2. Features

n Symmetrical output impedance
n High noise immunity
n Low power dissipation
n Balanced propagation delays
n ESD protection:

u HBM JESD22-A114E: exceeds 2000 V
u MM JESD22-A115-A: exceeds 200 V
u CDM JESD22-C101C: exceeds 1000 V

n Specified from −40 °C to +125 °C

3. Ordering information

Table 1. Ordering information

Type number Package

Temperature range Name Description Version

74AHC1GU04GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package;

5 leads; body width 1.25 mm

74AHC1GU04GV −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753

SOT353-1

4. Marking

Table 2. Marking codes

Type number Marking

74AHC1GU04GW AD
74AHC1GU04GV AU4

NXP Semiconductors

5. Functional diagram

74AHC1GU04

Inverter

AY

2

mna043

4

2

1

mna044

4

AY

Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram

6. Pinning information

6.1 Pinning

74AHC1GU04

Fig 4. Pin configuration

6.2 Pin description

1

n.c. V

2

A

3

GND Y

001aaf099

5

CC

4

mna045

Table 3. Pin description

Symbol Pin Description

n.c. 1 not connected
A 2 data input
GND 3 ground (0 V)
Y 4 data output
V

CC

5 supply voltage

7. Functional description

Table 4. Function table

H = HIGH voltage level; L = LOW voltage level

Input Output
A Y

LH
HL

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 2 of 12

NXP Semiconductors

74AHC1GU04

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CC

I

IK

V

I

I

OK

I

O

I

CC

I

GND

T

stg

P

tot

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For both TSSOP5 and SC-74A packages: above 87.5 °C the value of P

supply voltage −0.5 +7.0 V
input clamping current VI< −0.5 V −20 - mA
input voltage

[1]

−0.5 +7.0 V
output clamping current VO < −0.5 V or VO>VCC + 0.5 V - ±20 mA
output current −0.5 V < VO < VCC+ 0.5 V - ±25 mA
supply current - 75 mA
ground current −75 - mA
storage temperature −65 +150 °C
total power dissipation T

= −40 °C to +125 °C

amb

derates linearly with 4.0 mW/K.

tot

[2]

- 250 mW

Inverter

9. Recommended operating conditions

Table 6. Recommended operating conditions

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Min Typ Max Unit

V

CC

V

I

V

O

T

amb

∆t/∆V input transition rise and fall rate V

supply voltage 2.0 5.0 5.5 V
input voltage 0 - 5.5 V
output voltage 0 - V

CC

V

ambient temperature −40 +25 +125 °C

= 3.3 V ± 0.3 V - - 100 ns/V

CC

= 5.0 V ± 0.5 V - - 20 ns/V

V

CC

10. Static characteristics

Table 7. Static characteristics

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit

Min Typ Max Min Max Min Max

V

IH

HIGH-level
input voltage

V

IL

LOW-level
input voltage

VCC= 2.0 V 1.7 - - 1.7 - 1.7 - V

= 3.0 V 2.4 - - 2.4 - 2.4 - V

V

CC

= 5.5 V 4.4 - - 4.4 - 4.4 - V

V

CC

VCC= 2.0V - - 0.3 - 0.3 - 0.3 V

= 3.0 V - - 0.6 - 0.6 - 0.6 V

V

CC

= 5.5 V - - 1.1 - 1.1 - 1.1 V

V

CC

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 3 of 12

NXP Semiconductors

74AHC1GU04

Inverter

Table 7. Static characteristics

…continued

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit

Min Typ Max Min Max Min Max

V

OH

V

OL

I

I

I

CC

C

I

HIGH-level
output voltage

LOW-level
output voltage

input leakage
current

VI= VIH or V

IL

IO= −50 µA; VCC= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V

= −50 µA; VCC= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V

I

O

= −50 µA; VCC= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V

I

O

= −4.0 mA; VCC= 3.0 V 2.58 - - 2.48 - 2.40 - V

I

O

= −8.0 mA; VCC= 4.5 V 3.94 - - 3.8 - 3.70 - V

I

O

VI= VIH or V

IL

IO= 50 µA; VCC= 2.0 V - 0 0.1 - 0.1 - 0.1 V

= 50 µA; VCC= 3.0 V - 0 0.1 - 0.1 - 0.1 V

I

O

= 50 µA; VCC= 4.5 V - 0 0.1 - 0.1 - 0.1 V

I

O

= 4.0 mA; VCC= 3.0 V - - 0.36 - 0.44 - 0.55 V

I

O

= 8.0 mA; VCC= 4.5 V - - 0.36 - 0.44 - 0.55 V

I

O

VI= 5.5 V or GND;
V

= 0 V to 5.5 V

CC

supply current VI=VCCor GND; IO=0A;

V

= 5.5 V

CC

input

- - 0.1 - 1.0 - 2.0 µA

- - 1.0 - 10 - 40 µA

- 1.5 10 - 10 - 10 pF

capacitance

11. Dynamic characteristics

Table 8. Dynamic characteristics

GND = 0 V; tr = tf =≤ 3.0 ns. For test circuit see Figure 6.

Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit

Min Typ Max Min Max Min Max

t

pd

propagation
delay

A to Y; see Figure 5

VCC = 3.0 V to 3.6 V

CL= 15 pF - 3.4 7.1 1.0 8.5 1.0 10.0 ns

= 50 pF - 4.9 10.6 1.0 12.0 1.0 13.5 ns

C

L

= 4.5 V to 5.5 V

V

CC

CL= 15 pF - 2.6 5.5 1.0 6.0 1.0 7.0 ns

= 50 pF - 3.6 7.0 1.0 8.0 1.0 9.0 ns

C

L

C

PD

power
dissipation

per buffer;
V

= GND to V

I

CC

capacitance

[1] tpd is the same as t
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPDis used to determine the dynamic power dissipation PD(µW).

PD=CPD× V
fi= input frequency in MHz;

CC

and t

PLH

2

× fi+ ∑ (CL× V

PHL

.

2

CC

× fo) where:

[1]
[2]

[3]

[4]

-14- - - - - pF

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 4 of 12

NXP Semiconductors

fo= output frequency in MHz;
CL= output load capacitance in pF;
VCC= supply voltage in Volts.

12. Waveforms

(1)

A input

V

M

74AHC1GU04

Inverter

V

CC

Y output

t

PHL

(1)

V

M

t

PLH

mna046

VM = 0.5 × VCC; VI = GND to VCC. Test data is given in Table 8.

Fig 5. The input (A) to output (Y) propagation delay

times

13. Typical transfer characteristics

mna397

V
(V)

2.0

O

1.6

V

O

1.0

0.8

I

CC

(mA)

PULSE

GENERATOR

V

I

DUT

R

T

V

O

Definitions for test circuit:
CL = Load capacitance including jig and probe

capacitance.
RT = Termination resistance should be equal to

output impedance Zo of the pulse generator.

Fig 6. Load circuitry for switching times

V
(V)

3.0

O

V

O

C
50 pF

mna034

mna398

L

10

I

CC

(mA)

8

1.2

0.8

0.4
ID (drain current)

0

0

0.6

1.5

0.4

0.2

0

2.00.4 0.8 1.2 1.6

(V)

V

I

0

01 3

ID (drain current)

2

VI (V)

6

4

2

0

Fig 7. VCC= 2.0 V; IO= 0 A Fig 8. VCC= 3.0 V; IO=0 A

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 5 of 12

NXP Semiconductors

74AHC1GU04

Inverter

mna399

6

V

O

(V)

3

0

02 6

V

O

ID (drain current)

4

V

(V)

I

50

40

30

20

10

0

I

CC

(mA)

0.47 µF

V

I

(f = 1 kHz)

input

R

bias

= 560 kΩ

V

CC

output

100 µF

Fig 9. VCC= 5.5 V; IO= 0 A Fig 10. Test set-up for measuring forward

transconductance g

= ∆IO/∆VI at VO is

fs

constant

mna400

g

fs

(mA/V)

40

30

A

mna050

I

O

GND

20

10

0

0246

Fig 11. Typical forward transconductance gfs as a function of the supply voltage at T

VCC (V)

amb

=25°C

14. Application information

Some applications are:

• Linear amplifier (see Figure 12)

• In crystal oscillator design (see Figure 13)

Remark: All values given are typical unless otherwise specified.

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 6 of 12

NXP Semiconductors

74AHC1GU04

Inverter

R2

V

CC

1 µF

R1

Maximum V

0.5 × VCC.

G

v

Gol= open loop gain
Gv= voltage gain
R1 ≥ 3kΩ,R2≤ 1MΩ
ZL>10kΩ; Gol= 20 (typ.)
Typical unity gain bandwidth product is 5 MHz.

o(p-p)=VCC

G

–=

---------------------------------------

R1

1

------ -

R2

U04

− 1.5 V centered at

ol

1G

+()+

ol

mna052

Z

L

C1 = 47 pF (typ.)
C2 = 22 pF (typ.)
R1 = 1 MΩ to 10 MΩ (typ.)
R2 optimum value depends on the frequency and

required stability against changes in VCCor average
minimum ICC (ICC is typically 2 mA at VCC= 3 V and
f = 1 MHz).

U04

R1

R2

C1 C2

out

mna053

Fig 12. Used as a linear amplifier Fig 13. Crystal oscillator configuration

Table 9. External components for resonator (f < 1 MHz)

All values given are typical and must be used as an initial set-up.

Frequency R1 R2 C1 C2

10 kHz to 15.9 kHz 22 MΩ 220 kΩ 56 pF 20 pF
16 kHz to 24.9 kHz 22 MΩ 220 kΩ 56 pF 10 pF
25 kHz to 54.9 kHz 22 MΩ 100 kΩ 56 pF 10 pF
55 kHz to 129.9 kHz 22 MΩ 100 kΩ 47 pF 5 pF
130 kHz to 199.9 kHz 22 MΩ 47 kΩ 47 pF 5 pF
200 kHz to 349.9 kHz 22 MΩ 47 kΩ 47 pF 5 pF
350 kHz to 600 kHz 22 MΩ 47 kΩ 47 pF 5 pF

Table 10. Optimum value for R2

Frequency R2 Optimum for

3 kHz 2.0 kΩ minimum required I

8.0 kΩ minimum influence due to change in V

6 kHz 1.0 kΩ minimum required I

4.7 kΩ minimum influence by V

10 kHz 0.5 kΩ minimum required I

2.0 kΩ minimum influence by V

14 kHz 0.5 kΩ minimum required I

1.0 kΩ minimum influence by V

CC

CC

CC

CC

CC

CC

CC

CC

>14 kHz - replace R2 by C3 with a typical value of 35 pF

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 7 of 12

NXP Semiconductors

15. Package outline

74AHC1GU04

Inverter

TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm

D

y

Z

5

4

13

e

e

1

w M

b

p

c

A

2

E

H

E

A

1

L

p

L

detail X

SOT353-1

A

X

v M

A

A

(A3)

θ

1.5 3 mm0

scale

DIMENSIONS (mm are the original dimensions)

A

A

UNIT

max.

mm

1.1

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE
VERSION

SOT353-1 MO-203 SC-88A

A2A3b

1

0.101.0

0.8

p

0.30

0.15

0.15

IEC JEDEC JEITA

ceD

0.25

0.08

REFERENCES

(1)E(1)

2.25

1.85

1.35

1.15

0.65

e

1.3

LH

1

E

2.25

2.0

L

p

0.46

0.21

PROJECTION

EUROPEAN

wyv

0.1 0.10.30.425

(1)

Z

0.60

0.15

ISSUE DATE

00-09-01
03-02-19

θ

7°
0°

Fig 14. Package outline SOT353-1 (TSSOP5)

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 8 of 12

NXP Semiconductors

74AHC1GU04

Plastic surface-mounted package; 5 leads SOT753

Inverter

D

y

E

H

E

AB

X

v M

A

45

Q

A

A

1

c

132

e

detail X

b

p

wBM

L

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT753 SC-74A

0.100

0.013

b

cD

p

1

0.40

0.26

0.25

0.10

IEC JEDEC JEITA

3.1

2.7

E

1.7

1.3

REFERENCES

e

0.95

H

3.0

2.5

L

Qywv

p

E

0.6

0.2

0.33

0.23

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

02-04-16
06-03-16

Fig 15. Package outline SOT753 (SC-74A)

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 9 of 12

NXP Semiconductors

74AHC1GU04

16. Abbreviations

Table 11. Abbreviations

Acronym Description

CDM Charged Device Model
DUT Device Under Test
ESD ElectroStatic Discharge
HBM Human Body Model
MM Machine Model

17. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

74AHC1GU04_5 20070710 Product data sheet - 74AHC1GU04_4
Modifications:

74AHC1GU04_4 20020528 Product specification - 74AHC1GU04_3
74AHC1GU04_3 20020215 Product specification - 74AHC1GU04_2
74AHC1GU04_2 20010427 Product specification - 74AHC1GU04_1
74AHC1GU04_1 19990519 Product specification - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Package SOT353 changed to SOT353-1 in Section 3 and Section 15.

• Quick reference data and Soldering sections removed.

Inverter

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 10 of 12

NXP Semiconductors

18. Legal information

18.1 Data sheet status

74AHC1GU04

Inverter

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus of device(s)described in this document mayhave changedsince this document was publishedand maydiffer in case of multipledevices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

18.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall haveno liability forthe consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort datasheet is intended
for quickreference only and should notbe relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

18.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressed or implied, asto the accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction ofa NXP Semiconductorsproduct can reasonablybe expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134) maycause permanent
damage to thedevice. Limiting valuesare stress ratings onlyand operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication ofany license under any copyrights, patents
or other industrial or intellectual property rights.

18.4 Trademarks

Notice: Allreferenced brands,product names, service namesand trademarks
are the property of their respective owners.

19. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 05 — 10 July 2007 11 of 12

NXP Semiconductors

20. Contents

1 General description. . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Functional description . . . . . . . . . . . . . . . . . . . 2

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

9 Recommended operating conditions. . . . . . . . 3

10 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3

11 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4

12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

13 Typical transfer characteristics . . . . . . . . . . . . 5

14 Application information. . . . . . . . . . . . . . . . . . . 6

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

16 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

17 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

18.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

18.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

18.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

19 Contact information. . . . . . . . . . . . . . . . . . . . . 11

20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

74AHC1GU04

Inverter

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 10 July 2007

Document identifier: 74AHC1GU04_5