74AHC1GU04
Inverter
Rev. 05 — 10 July 2007 Product data sheet
1. General description
The 74AHC1GU04 is a high-speed Si-gate CMOS device. It provides an inverting single
stage function.
2. Features
n Symmetrical output impedance
n High noise immunity
n Low power dissipation
n Balanced propagation delays
n ESD protection:
u HBM JESD22-A114E: exceeds 2000 V
u MM JESD22-A115-A: exceeds 200 V
u CDM JESD22-C101C: exceeds 1000 V
n Specified from −40 °C to +125 °C
3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name Description Version
74AHC1GU04GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package;
5 leads; body width 1.25 mm
74AHC1GU04GV −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753
SOT353-1
4. Marking
Table 2. Marking codes
Type number Marking
74AHC1GU04GW AD
74AHC1GU04GV AU4
NXP Semiconductors
5. Functional diagram
74AHC1GU04
Inverter
AY
2
mna043
4
2
1
mna044
4
AY
Fig 1. Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
74AHC1GU04
Fig 4. Pin configuration
6.2 Pin description
1
n.c. V
2
A
3
GND Y
001aaf099
5
CC
4
mna045
Table 3. Pin description
Symbol Pin Description
n.c. 1 not connected
A 2 data input
GND 3 ground (0 V)
Y 4 data output
V
CC
5 supply voltage
7. Functional description
Table 4. Function table
H = HIGH voltage level; L = LOW voltage level
Input Output
A Y
LH
HL
74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 10 July 2007 2 of 12
NXP Semiconductors
74AHC1GU04
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
I
IK
V
I
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For both TSSOP5 and SC-74A packages: above 87.5 °C the value of P
supply voltage −0.5 +7.0 V
input clamping current VI< −0.5 V −20 - mA
input voltage
[1]
−0.5 +7.0 V
output clamping current VO < −0.5 V or VO>VCC + 0.5 V - ±20 mA
output current −0.5 V < VO < VCC+ 0.5 V - ±25 mA
supply current - 75 mA
ground current −75 - mA
storage temperature −65 +150 °C
total power dissipation T
= −40 °C to +125 °C
amb
derates linearly with 4.0 mW/K.
tot
[2]
- 250 mW
Inverter
9. Recommended operating conditions
Table 6. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
V
CC
V
I
V
O
T
amb
∆t/∆V input transition rise and fall rate V
supply voltage 2.0 5.0 5.5 V
input voltage 0 - 5.5 V
output voltage 0 - V
CC
V
ambient temperature −40 +25 +125 °C
= 3.3 V ± 0.3 V - - 100 ns/V
CC
= 5.0 V ± 0.5 V - - 20 ns/V
V
CC
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
V
IH
HIGH-level
input voltage
V
IL
LOW-level
input voltage
VCC= 2.0 V 1.7 - - 1.7 - 1.7 - V
= 3.0 V 2.4 - - 2.4 - 2.4 - V
V
CC
= 5.5 V 4.4 - - 4.4 - 4.4 - V
V
CC
VCC= 2.0V - - 0.3 - 0.3 - 0.3 V
= 3.0 V - - 0.6 - 0.6 - 0.6 V
V
CC
= 5.5 V - - 1.1 - 1.1 - 1.1 V
V
CC
74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 10 July 2007 3 of 12
NXP Semiconductors
74AHC1GU04
Inverter
Table 7. Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
V
OH
V
OL
I
I
I
CC
C
I
HIGH-level
output voltage
LOW-level
output voltage
input leakage
current
VI= VIH or V
IL
IO= −50 µA; VCC= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
= −50 µA; VCC= 3.0 V 2.9 3.0 - 2.9 - 2.9 - V
I
O
= −50 µA; VCC= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= −4.0 mA; VCC= 3.0 V 2.58 - - 2.48 - 2.40 - V
I
O
= −8.0 mA; VCC= 4.5 V 3.94 - - 3.8 - 3.70 - V
I
O
VI= VIH or V
IL
IO= 50 µA; VCC= 2.0 V - 0 0.1 - 0.1 - 0.1 V
= 50 µA; VCC= 3.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 50 µA; VCC= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; VCC= 3.0 V - - 0.36 - 0.44 - 0.55 V
I
O
= 8.0 mA; VCC= 4.5 V - - 0.36 - 0.44 - 0.55 V
I
O
VI= 5.5 V or GND;
V
= 0 V to 5.5 V
CC
supply current VI=VCCor GND; IO=0A;
V
= 5.5 V
CC
input
- - 0.1 - 1.0 - 2.0 µA
- - 1.0 - 10 - 40 µA
- 1.5 10 - 10 - 10 pF
capacitance
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf =≤ 3.0 ns. For test circuit see Figure 6.
Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
t
pd
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
CL= 15 pF - 3.4 7.1 1.0 8.5 1.0 10.0 ns
= 50 pF - 4.9 10.6 1.0 12.0 1.0 13.5 ns
C
L
= 4.5 V to 5.5 V
V
CC
CL= 15 pF - 2.6 5.5 1.0 6.0 1.0 7.0 ns
= 50 pF - 3.6 7.0 1.0 8.0 1.0 9.0 ns
C
L
C
PD
power
dissipation
per buffer;
V
= GND to V
I
CC
capacitance
[1] tpd is the same as t
[2] Typical values are measured at VCC = 3.3 V.
[3] Typical values are measured at VCC = 5.0 V.
[4] CPDis used to determine the dynamic power dissipation PD(µW).
PD=CPD× V
fi= input frequency in MHz;
CC
and t
PLH
2
× fi+ ∑ (CL× V
PHL
.
2
CC
× fo) where:
[1]
[2]
[3]
[4]
-14- - - - - pF
74AHC1GU04_5 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 05 — 10 July 2007 4 of 12
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