NXP 2N 7002 NXP Datasheet

1. Description

2. Features

2N7002

N-channel enhancement mode field-effect transistor

Rev. 03 — 27 July 2000 Product specification

N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability:

2N7002 in SOT23.

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

c

c

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simplified outline and symbol

Pin Description Simplified outline Symbol

1 gate (g)
2 source (s)
3 drain (d)

1. TrenchMOS is a trademark of Royal Philips Electronics.

3

03ab44

12

SOT23 N-channel MOSFET

d

g

03ab30

s

Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V
I
P
T
R

DS

D

tot
j
DSon

drain-source voltage (DC) Tj=25to150°C − 60 V
drain current (DC) Tsp=25°C; VGS=10V − 300 mA
total power dissipation Tsp=25°C − 0.83 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 500 mA 2.8 5 Ω

= 4.5 V; ID= 75 mA 3.8 5.3 Ω

V

GS

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) Tj=25to150°C − 60 V
drain-gate voltage (DC) Tj=25to150°C; RGS=20kΩ−60 V
gate-source voltage (DC) −±30 V
peak gate-source voltage tp≤ 50 µs; pulsed; duty cycle = 25% −±40 V
drain current (DC) Tsp=25°C; VGS=10V;

− 300 mA

Figure 2 and 3

T

= 100 °C; VGS=10V;Figure 2 − 190 mA

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs;

− 1.2 A

Figure 3

total power dissipation Tsp=25°C; Figure 1 − 0.83 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C

source (diode forward) current (DC) Tsp=25°C − 300 mA
peak source (diode forward) current Tsp=25°C; pulsed; tp≤ 10 µs − 1.2 A

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Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

120

P

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175

P

P

der

tot

----------------------

P

tot 25 C°()

100%×=

03aa17

Tsp (oC)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

10

I

D

Tsp = 25oC

(A)

120

I

der

(%)

100

80

60

40

20

0

0 25 50 75 100 125 150 175

03aa25

Tsp (oC)

VGS≥ 4.5 V

I

I

der

D

------------------ -

I

D25C°()

100%×=

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03aa03

tp = 10 µs

1

P

-1

10

t

p

-2

10

11010

R

= VDS/ I

DSon

t

p

δ =

T

t

T

D

100 µs

1 ms

10 ms

D.C.

100 ms

VDS (V)

2

Tsp=25°C; IDM is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07319

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Product specification Rev. 03 — 27 July 2000 3 of 13

Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Value Unit

R

th(j-sp)

R

th(j-a)

thermal resistance from junction to solder
point

thermal resistance from junction to ambient mounted on a printed circuit board;

7.1 Transient thermal impedance

mounted on a metal clad substrate;

Figure 4

minimum footprint

150 K/W

350 K/W

03aa01

t

p

δ

=

T

p

110

t

T

tp (s)

Z

th(j-sp)

10

K/W

10

3

δ = 0.5

2

10

0.2

0.1

10

0.02

1

single pulse

-1

-5

10

-4

10

0.05

-3

10

-2

10

10

P

t

-1

Mounted on metal clad substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of

pulse duration.

9397 750 07319

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Product specification Rev. 03 — 27 July 2000 4 of 13

Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 1 mA; VDS=VGS;

drain-source leakage current VDS= 48 V; VGS=0V

gate-source leakage current VGS= ±15 V; VDS=0V − 10 100 nA
drain-source on-state

resistance

Dynamic characteristics

g

fs

C

iss

C

oss

C

rss

t

on

t

off

forward transconductance VDS= 10 V; ID= 200 mA;

input capacitance VGS=0V; VDS=10V;
output capacitance − 18 30 pF
reverse transfer capacitance − 7.5 10 pF
turn-on time VDD= 50 V; RD= 250 Ω;
turn-off time − 12 15 ns

Source-drain diode

V

SD

source-drain (diode forward)
voltage

t

rr

Q

r

reverse recovery time IS= 300 mA;
recovered charge − 30 − nC

ID=10µA; VGS=0V

=25°C6075− V

T

j

= −55 °C55−−V

T

j

Figure 9

=25°C12− V

T

j

= 150 °C 0.6 −−V

T

j

= −55 °C −−3.5 V

T

j

=25°C − 0.01 1.0 µA

T

j

= 150 °C −−10 µA

T

j

VGS=10V; ID= 500 mA;

Figure 7 and 8

=25°C − 2.8 5 Ω

T

j

= 150 °C −−9.25 Ω

T

j

= 4.5 V; ID=75mA;

V

GS

Figure 7 and 8

=25°C − 3.8 5.3 Ω

T

j

100 300 − mS

Figure 11

− 25 40 pF

f = 1 MHz; Figure 12

− 310ns

=10V; RG=50Ω;

V

GS

=50Ω

R

GS

IS= 300 mA; VGS=0V;

− 0.85 1.5 V

Figure 13

− 30 − ns

/dt = −100 A/µs;

dI

S

=0V; VDS=25V

V

GS

9397 750 07319

Product specification Rev. 03 — 27 July 2000 5 of 13

© Philips Electronics N.V. 2000. All rights reserved.

Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

1

ID

Tj = 25oC

(A)

0.8

0.6

0.4

0.2

0

0 0.4 0.8 1.2 1.6 2

03aa04

VGS = 10 V

4.5 V

4 V

3.5 V

3 V

VDS (V)

Tj=25°CT

Fig 5. Output characteristics: drain current as a

Fig 6. Transfer characteristics: drain current as a

function of drain-source voltage; typical values.

03aa05

Tj = 25oC

VGS = 10 V

ID (A)

R

DSon

(Ω)

10

3 V

9
8
7
6
5
4
3
2
1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

3.5V

4 V

4.5 V

0.8

I

D

VDS > ID X R

(A)

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

01234567

=25°C and 150 °C; VDS> ID× R

j

DSon

Tj = 25oC

DSon

function of gate-source voltage; typical values.

2.2

a

2

1.8

1.6

1.4

1.2
1

0.8

0.6

0.4

0.2
0

-60 -20 20 60 100 140 180

03aa06

150oC

VGS (V)

03aa28

Tj (oC)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

9397 750 07319

Fig 8. Normalized drain-source on-state resistance

R

a

DSon

=

----------------------------

R

DSon 25 C°()

factor as a function of junction temperature.

© Philips Electronics N.V. 2000. All rights reserved.

Product specification Rev. 03 — 27 July 2000 6 of 13

Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

3

V

GS(th)

(V)

2.5

2

1.5

1

0.5

0

-60 -20 20 60 100 140 180

ID= 1 mA; VDS=V

typ

min

GS

03aa34

Tj (oC)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

0.5

g

fs

VDS > ID X R

(S)

0.45

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

DSon

03aa07

Tj = 25oC

150oC

ID (A)

-1

10

I

D

(A)

-2

10

-3

10

-4

10

-5

10

-6

10

0 0.5 1 1.5 2 2.5 3

03aa37

typmin

VGS (V)

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

VDS (V)

03aa09

C

C

oss

C

iss

rss

2

2

10

C

, C

iss

oss

C

(pF)

rss

10

1

-1

10

11010

Tj=25°C and 150 °C; VDS> ID× R

DSon

Fig 11. Forward transconductance as a function of

drain current; typical values.

VGS= 0 V; f = 1 MHz

Fig 12. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values.

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Product specification Rev. 03 — 27 July 2000 7 of 13

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Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

1

I

VGS = 0 V

S

(A)

0.8

0.6

0.4

0.2

0

0 0.2 0.4 0.6 0.8 1 1.2

150oC

03aa08

Tj = 25oC

VSD (V)

Tj=25°C and 150 °C; VGS=0V

Fig 13. Source (diode forward) current as a function of source-drain (diode forward)

voltage; typical values.

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Product specification Rev. 03 — 27 July 2000 8 of 13

Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

9. Package outline

Plastic surface mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

1

A

max.

0.48

0.1

0.38

cD

b

p

0.15

3.0

0.09

2.8

IEC JEDEC EIAJ

E

1.4

1.9

1.2

REFERENCES

e

e

H

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

0.95

1

2.5

2.1

Fig 14. SOT23.

9397 750 07319

Product specification Rev. 03 — 27 July 2000 9 of 13

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Philips Semiconductors

2N7002

N-channel enhancement mode field-effect transistor

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

03 20000727 HZG336 Product specification; third version; supersedes 2N7002_CNV_2 of 970617.

Converted from VDMOS (Nijmegen) to TrenchMOS™ (Hazel Grove) technology.

02 19970617 - Product specification; second version.
01 19901031 - Product specification; initial version.

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Philips Semiconductors

11. Data sheet status

2N7002

N-channel enhancement mode field-effect transistor

Datasheet status Product status Definition

Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may

change in any manner without notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

[1] Please consult the most recently issued data sheet before initiating or completing a design.

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

[1]

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

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N-channel enhancement mode field-effect transistor

Philips Semiconductors - a worldwide company

2N7002

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For all other countries apply to: Philips Semiconductors,

Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
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Internet: http://www.semiconductors.philips.com

(SCA70)

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Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2N7002

N-channel enhancement mode field-effect transistor

© Philips Electronics N.V. 2000. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.

The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.

Date of release: 27 July 2000 Document order number: 9397 750 07319