NTE ELECTRONICS NTE 123AP Datasheet

NTE123AP

Silicon NPN Transistor

Audio Amplifier, Switch

(Compl to NTE159)

Absolute Maximum Ratings:

Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (TA = +25°C), P

Derate Above 25°C 5.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TC = +25°C), P

Derate Above 25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Case, R
Thermal Resistance, Junction to Ambient, R

Electrical Characteristics: (TA = +25°C unless otherwise specified)

CEO

CB

EB

C

D

D

J

stg

thJC

thJA

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

83.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector−Emitter Breakdown Voltage V

Collector−Base Breakdown Voltage V

Emitter−Base Breakdown Voltage V

Collector Cutoff Current I

Base Cutoff Current I

ON Characteristics (Note 1)

DC Current Gain h

(BR)CEOIC

(BR)CBOIC

(BR)EBOIE

CEV

BEV

FE

= 1mA, IB = 0, Note 1 40 − − V

= 0.1mA, IE = 0 60 − − V

= 0.1mA, IC = 0 6 − − V

VCE = 35V, V

VCE = 35V, V

VCE = 1V, IC = 0.1mA 20 − −

VCE = 1V, IC = 1mA 40 − −

VCE = 1V, IC = 10mA 80 − −

VCE = 1V, IC = 150mA 100 − 300

VCE = 1V, IC = 500mA 40 − −

= 0.4V − − 0.1 µA

EB(off)

= 0.4V − − 0.1 µA

EB(off)

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

()

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 1) (Cont’d)

Collector−Emitter Saturation Voltage V

Base−Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

Small−Signal Characteristics

Current Gain−Bandwidth Product f

Collector−Base Capacitance C

Emitter−Base Capacitance C

Input Impedance h

Voltage Feedback Ratio h

Small−Signal Current Gain h

Output Admittance h

Switching Characteristics

Delay Time t

Rise Time t

Storage Time t

Fall Time t

= 150mA, IB = 15mA − − 0.4 V

IC = 500mA, IB = 50mA − − 0.75 V

= 150mA, IB = 15mA 0.75 − 0.95 V

IC = 500mA, IB = 50mA − − 1.2 V

IC = 20mA, VCE = 10V, f = 100MHz 250 − − MHz

T

VCB = 5V, IE = 0, f = 100kHz − − 6.5 pF

cb

VCB = 0.5V, IC = 0, f = 100kHz − − 30 pF

eb

IC = 1mA, VCE = 10V, f = 1kHz 1.0 − 15 kΩ

ie

IC = 1mA, VCE = 10V, f = 1kHz 0.1 − 8.0 x 10

re

IC = 1mA, VCE = 10V, f = 1kHz 40 − 500

fe

IC = 1mA, VCE = 10V, f = 1kHz 1.0 − 30 µmhos

oe

VCC = 30V, V

d

IC = 150mA, IB1 = 15mA

r

VCC = 30V, IC = 150mA,

s

IB1 = IB2 = 15mA

f

EB(off)

= 2V,

− − 15 ns

− − 20 ns

− − 225 ns

− − 30 ns

−6

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.