NTE NTE99 Datasheet

NTE99

Silicon NPN Transistor

w

Darlington

Description:

The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
suited for line–operated switchmode applications.

Applications:

D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers

Features:

D Fast Turn–Off Times:

1.0µs (max) Inductive Crossover Time – 20 Amps

2.5µs (max) Inductive Storage Time – 20 Amps

D Operating Temperature Range: –65° to +200°C

/Base–Emitter Speed–up Diode

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO
CEV

EB

Continuous 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 75A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation, P

D

TC = +25°C 250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 1.43W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +100°C 143W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

Maximum Lead Temperature (During Soldering, 1/8” from case for 5sec), T
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+275°C. . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

µ

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I

CEO(sus)IC

CEV
EBO

ON Characteristics (Note 2)
DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

Diode Forward Voltage V

Dynamic Characteristic

Output Capacitance C

Switching Characteristics

Resistive Load
Delay Time t
Rise Time t
Storage Time t
Fall Time t

Inductive Load, Clamped

FE

ob

d

s

= 100mA, IB = 0, V

V

= 600V, V

CEV

BE(off)

= 400V 400 – – V

clamp

= 1.5V – – 0.25 mA

VBE = 2V, IC = 0 – – 350 mA

IC = 20A, VCE = 5V 25 – –
IC = 40A, VCE = 5V 10 – –

= 20A, IB = 1A – – 2.2 V

IC = 50A, IB = 10A – – 5.0 V

= 20A, IB = 1A – – 2.75 V

IF = 20A, Note 3 – 2.5 5.0 V

f

VCB = 10V, IE = 0, f

VCC = 250V, IC = 20A,
IB1 = 1A, V

r

tp = 25µs, Duty Cycle ≤ 2%

t = 25

BE(off)

s, Duty Cycle ≤ 2%

= 100kHz – – 750 pF

test

– 0.14 0.3 µs

= 5V,

– 0.3 1.0 µs
– 0.8 2.5 µs

f

– 0.3 1.0 µs

Storage Time t
Crossover Time t

sv

IC = 20A(pk), V
IB1 = 1A, V

c

BE(off)

clamp

= 5V

= 250V,

– 1.0 2.5 µs
– 0.36 1.0 µs

Note 2. Pulse Test: Pulse Widtg = 300µs, Duty Cycle ≤ 2%.
Note 3. The internal Collector–to–Emitter diode can eliminate the need for an external diode to

clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V

) of this

f

diode is comparable to that of typical fast recovery rectifiers.

Circuit Outline

C

B

[ 50 [ 8

E