NTE NTE98 Datasheet
NTE98
Silicon NPN Transistor
HV Darlington Power Amp, Switch
Description:
The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage,
high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
suited for line operated switch–mode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO(sus)
CEX(sus)
CEV
EB
Continuous 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 5.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
= +25°C), P
C
D
Derate Above +25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
= +100°C), P
C
stg
D
J
thJC
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+275°C. . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage V
CEO(sus)IC
V
CEX(sus)IC
Collector Cutoff Current I
I
Emitter Cutoff Current I
ON Characteristics (Note 3)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Diode Forward Voltage V
Dynamic Characteristics
CEV
CER
EBO
FE
F
= 100mA, IB = 0, V
= 2A, V
IC = 5A, V
V
= 700V, V
CEV
V
= 700V, V
CEV
= 500V, TC = +100°C 500 – – V
clamp
= 500V, TC = +100°C 375 – – V
clamp
BE(off)
BE(off)
= 500V 500 – – V
clamp
= 1.5V – – 0.25 mA
= 1.5V, TC = +150°C – – 5.0 mA
VCE= 700V, RBE= 50Ω, TC = +100°C – – 5.0 mA
VEB = 2V, IC = 0 – – 175 mA
VCE = 5V, IC = 5A 40 – 400
VCE = 5V, IC = 10A 30 – 300
= 10A, IB = 500mA – – 2.0 V
IC = 10A, IB = 500mA, TC = +100°C – – 2.5 V
IC = 20A, IB = 2A – – 3.5 V
= 10A, IB = 500mA – – 2.5 V
IC = 10A, IB = 500mA, TC = +100°C – – 2.5 V
IF = 5A, Note 3 – 3 5 V
Small–Signal Current Gain h
Output Capacitance C
VCE = 10V, IC = 1A, f
fe
VCB = 50V, IE = 0, f
ob
= 1MHz 8 – –
test
= 100kHz 100 – 325 pF
test
Switching Characteristics (Resistive Load)
Delay Time t
Rise Time t
Storage Time t
Fall Time t
VCC = 250V, IC = 10A, IB1 = 500mA,
d
V
= 5V, tp = 50µs, Duty Cycle ≤ 2%
r
s
f
BE(off)
– 0.12 0.25 µs
– 0.5 1.5 µs
– 0.8 2.0 µs
– 0.2 0.6 µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time t
Crossover Time t
Storage Time t
Crossover Time t
sv
IC = 10A Peak, V
IB1 = 500mA, V
c
sv
IC = 10A Peak, V
IB1 = 500mA, V
c
= 250V,
clamp
= 5V, TC = +100°C
BE(off)
= 250V,
clamp
= 5V, TC = +25°C
BE(off)
– 1.5 3.5 µs
– 0.36 1.6 µs
– 0.8 – µs
– 0.18 – µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. The internal Collector–Emitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (V
) of this diode is
F
comparable to that of typical fast recovery rectifiers.
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