NTE NTE94 Datasheet

NTE94

Silicon NPN Transistor

High Voltage Switch

Description:

The NTE94 i s a s ilicon N PN t ransistor i n a TO3 t ype c ase d esigned f or m edium t o h igh v oltage inverters,
converters, regulators, and switching circuits.

Features:

D High Collector–Emitter Voltage: V
D DC Current Gain Specified at 1A and 2.5A

CEO

= 300V

D Low Collector–Emitter Saturation Voltage: V

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO

CB

EB

Continuous 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I
Total Device Dissipation (T

B

= +75°C), P

C

D

Derate Above 75°C 1.33W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

CE(sat)

= 0.8V @ 1A

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +75°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V

CEO(sus)IC

Collector Cutoff Current I

I

Emitter Cutoff Current I

ON Characteristics

DC Current Gain h

Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

CE(sat)IC
BE(sat)IC

Dynamic Characteristics

Current Gain–Bandwidth Product f

.135 (3.45) Max

.350 (8.89)

CEO
CEX

EBO

FE

T

.875 (22.2)

Dia Max

= 100mA, IB = 0 300 – – V
VCE = 300V, IB = 0 – – 0.25 mA
VCE = 300V, V

= +125°C

T

C

EB(off)

= 1.5V,

– – 0.5 mA

VEB = 5V, IC = 0 – – 5 mA

IC = 1A, VCE = 5V 30 – 90
IC = 2.5A, VCE = 5V 10 – –

= 1A, IB = 0.1A – – 0.8 V

= 1A, IB = 0.1A – – 1.2 V

IC = 200mA, VCE = 10V,

2.5 – – MHz

f = 1MHz

.215 (5.45)

.430

(10.92)

Emitter

Seating
Plane

.040 (1.02).312 (7.93) Min

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia
(2 Holes)

.188 (4.8) R Max

.525 (13.35) R Max

Collector/CaseBase