NTE NTE93, NTE92 Datasheet

NTE92 (NPN) & NTE93 (PNP)
Silicon Complementary Transistors
Hi–Fi Power Amp, Audio Ourtput
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V Collector–Emitter Voltage, V Emitter–Base Voltage, V Collector Current, I Base Current, I
C
B
Collector Power Dissipation (T Junction Temperature, T Storage Temperature Range, T
CBO
EBO
J
CEO
= +25°C), P
C
stg
C
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE93MCP). Matched comple-
mentary pairs have their gain specification (h
) matched to within 10% of each other.
FE
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I Emitter Cutoff Current I Collector–Emitter Breakdown Voltage V DC Current Gain h Collector–Emitter Saturation Voltage V Transistion Frequency f
(TA = +25°C unless otherwise specified)
CBO EBO
(BR)CEOIC
FE
CE(sat)IC
T
VCB = 200V 0.1 mA VBE = 6V 0.1 mA
VCE = 4V, IC = 5A 30 120
VCE = 12V, IE = 0.5A 20 MHz
= 50mA 200 V
= 10A, IB = 1A 3 V
1.430 (36.32)
.961 (24.42)
BCE
.843
(21.42)
.788
(20.02)
Min
.215 (5.48) .118 (3.0)
.244 (6.2) Max
Collector connected to Tab
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