NTE NTE929 Datasheet

NTE929

Integrated Circuit

General Purpose, High Current, NPN Transistor Array

Description:

The NTE929 is a versatile array of five high–current (to 100mA) NPN transistors on a common mono­lithic substrate. In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e.
1mA) for applications in which offset parameters are of special importance.

Independent connections for each transistors plus a separate terminal for the substrate permit maxi­mum flexibility in circuit design.

Features

D High I
D Low V

:

100mA max

C

(at 50mA) 0.7V max.

CEsat

D Matched pair (Q1 and Q2)

V

(VBE matched): ±5mV max.

10

I

(at 1mA): 2.5µA max.

10

D 5 independent transistors plus separate substrate connection.

Applications:

D Signal processing and switching systems operating from DC to VHF
D Lamp and relay driver
D Differential amplifier
D Temperature–compensated amplifier
D Thyristor firing

Absolute Maximum Ratings

Power Dissipation, P

D

: (TA = +25°C unless otherwise specified)

Any One Transistor 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Package 750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 55°C Derate Linearly 6.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Ambient Temperature Range, T
Storage Temperature range, T

stg

opr

Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), T

L

–55 to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65 to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+265°C. . . . . . . . . . .

The following ratings apply for each transistor in the device:

Collector–Emitter Voltage, V
Collector–Base Voltage, V

CEO

CBO

Collector–Substrate Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

B

EBO

C

CIO

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. The collector of each transistor of the NTE929 is isolated from the substrate by an integral

diode. The substrate must be connected to a voltage which is more negative than any collec­tor voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)
should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can
be used to establish a signal ground.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

For Each Transistor

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Collector–Substrate Breakdown Voltage V
Emitter–Base Breakdown Voltage V

(BR)CBOIC
(BR)CEOIC

(BR)CIOICI

(BR)EBOIE

Collector Cutoff Current I

I

DC Forward Current h

Base–Emitter Voltage V
Collector–Emitter Saturation Voltage V

CE(sat)IC

Gain–Bandwidth Product f
Absolute Input Offset Voltage V
Absolute Input Offset Current I

Collector Q
Collector Q

Base Q

Emitter Q

Base Q

Collector Q

Emitter Q

= 100µA, IE = 0 20 60 – V
= 1mA, IB = 0 15 24 – V

= 100µA, IB = 0, IE = 0 20 60 – V

= 500µA, IC = 0 5.0 6.9 – V

CEO
CBO

FE

VCE = 10V, IB = 0 – – 10 µA
VCE = 10V, IE = 0 – – 1 µA
VCE = 3V, IC = 10mA 40 76 –
VCE = 3V, IC = 50mA 40 75 –

BE

VCE = 3V, IC = 10mA 0.65 0.74 0.85 V

= 50mA, IB = 5mA – 0.4 0.7 V

T
IO

IO

VCE = 3V, IC = 10mA – 450 – MHz
VCE = 3V, IC = 1mA – 1.2 5.0 mV
VCE = 3V, IC = 1mA – 0.7 2.5 µA

Pin Connection Diagram

1

1

2

2

3

2

4

2

5Substrate
6

3

7

3

8

3

Base Q

16

Emitter Q

15

Collector Q

14

Base Q

13

Emitter Q

12

Emitter Q

11

Base Q

10

Collector Q

9

1

1

5

5

5
4

4

4

.245

(6.22)

Min

16 9

.260 (6.6) Max

18

.785 (19.9)

Max

.200 (5.08)

Max

.100 (2.54)

.700 (17.7)

.300

(7.62)