NTE NTE918 Datasheet
NTE918
NTE918M
NTE918SM
Integrated Circuit
High Speed Operational Amplifier
Description:
The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external components are necessary for operation. However, unlike most internally compensated amplifiers, external
frequency compensation may be added for optimum performance. For inverting applications, feedforward compensation will boost the slew rate to over 150V/µs and almost double the bandwidth.
Overcompensation can be used with the amplifier for greater stability when maximum bandwidth is
not needed. Further, a single capacitor can be added to reduce the 0.1% setting time to under 1µs.
The high speed and fast setting time of these OP amps make them useful in A/D converters, oscillators, active filters, sample and hold circuits, or general purpose amplifiers. These devices are easy
to apply and offer an order of magnitude better AC performance than industry standards such as the
NTE909 and NTE909D.
Features:
D 15MHz Small Signal Bandwidth
D Guaranteed 50V/µs Slew Rate
D Maximum Bias Current of 250nA
D Operates from Supplies of ±5V to ±20V
D Internal Frequency Compensation
D Input and Output Overload Protected
D Pin Compatible with General Purpose OP Amps
D Available in 3 Different Case Styles:
8–Lead Metal Can: NTE918
8–Lead Mini DIP: NTE918M
8–Lead SOIC (Surface Mount): NTE918SM
Absolute Maximum Ratings:
Power Supply Voltage, V
Power Dissipation (Note 1), P
Differential Input Current (Note 2), I
Input Voltage (Note 3), V
Output Short–Circuit Duration, t
Operating Temperature Range, T
Storage Temperature Range, T
S
D
ID
I
S
opr
stg
Lead Temperature (During Soldering, 10sec), T
0° to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Indefinite. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE918 (Metal Can) +300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE918M (Plastic DIP) +260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE918SM (Surface Mount)
Vapor Phase (60sec) +215°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Infrared (15sec) +220°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The maximum junction temperature of these devices is +110°C. For operating at elevated
temperatures, the NTE918 must be derated based on a thermal resistance of +150°C/W,
junctio to ambient, or +45°C/W, junction to case. The thermal resistance of the NTE918M
and the NTE918SM is +100°C/W, junction to ambient.
Note 2. The inputs are shunted with back–to–back diodes for overvoltage protection. Therefore, ex-
cessive current will flow if a differential input voltage in excess of 1V is applied between the
inputs unless some limiting resistance is used.
Note 3. For s upply v oltages l ess t han ±15V, t he a bsolute m aximum input v oltage i s e qual t o t he s upply
voltage.
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Input Offset Voltage V
Input Offset Current I
Input Bias Current I
Input Resistance r
Supply Current ICC, IEETA = +25°C – 5 10 mA
Large Signal Voltage Gain A
Slew Rate SR VS = ±15V, AV = 1, TA = +25°C, Note 5 50 70 – V/µs
Small Signal Bandwidth BW VS = ±15V, TA = +25°C – 15 – MHz
Output Voltage Swing V
Input Voltage Range V
Common–Mode Rejection Ratio CMRR 100 – – dB
Supply Voltage Rejection Ratio PSRR 65 80 – dB
: (±5V ≤ VS ≤ ±20V, 0° ≤ TA ≤ +70°C, Note 4 unless otherwise specified)
IO
TA = +25°C – 4 10 V
IO
TA = +25°C – 30 200 nA
IB
TA = +25°C – 150 500 nA
TA = +25°C 0.5 3.0 – MΩ
i
VS = ±15V, V
V
VS = ±15V, V
VS = ±15V, RL = 2kΩ ±12 ±13 – V
O
VS = ±15V ±11.5 – – V
I
= ±10V, RL ≥ 2kΩ 20 – – V/mV
OUT
= ±10V, RL ≥ 2kΩ, TA = +25°C 25 200 – V/mV
OUT
– – 15 V
– – 300 nA
– – 750 nA
Note 4. Power supplies must be bypassed with 0.1µF disc capacitors.
Note 5. Sl ew rat e is te s te d wit h V
is stepped from –7.5V to +7.5V and vice versa. The slew rates between –5V and +5V and
V
IN
= ±15V. These d evices are in a unity–gain non–inverting configuration.
S
vice versa are tested and guaranteed to exceed 50V/µs.
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