NTE NTE91, NTE90 Datasheet

NTE90 (NPN) & NTE91 (PNP)

Silicon Complementary Transistors

General Purpose High Gain Amplifier

Absolute Maximum Ratings: (TA = +25°C)

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

CEO

CBO

EBO

C

J

stg

120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h

Base–Emitter Voltage V
Collector–Emitter Saturation Voltage V
Current Gain–Bandwidth Product f
Collector Output Capacitance C

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC

CBO

FE1

h

FE2

BE

CE(sat)IC

T
ob

VCB = 100V, IB = 0 – – 0.5 µA
VCE = 12V, IC = 2mA 400 – 800
VCE = 12V, IC = 10mA 125 – –
VCE = 12V, IC = 2mA – – 0.75 V

VCE = 12V, IC = 5mA – 350 – MHz
VCB = 25V, IE = 0, f = 1MHz – 1.6 – pF

= 1mA, RBE = ∞ 120 – – V
= 10µA, IE = 0 120 – – V

= 10mA, IB = 1mA – – 0.2 V

.339

(8.62)

Max

.512

(13.0)

Min

.100 (2.54)

Seating Plane

.026 (.66)
Dia Max

E C B

.240 (6.09) Max

.200

(5.08)

Max