NTE NTE888M Datasheet

NTE888M

Integrated Circuit

Low Power Programmable Operational Amplifier

Description:

The NTE888M is an operational amplifier in an 8–Lead DIP type package featuring low power con­sumption and high input impedance. In addition, the quiescent currents within this device may be
programmed by the choice of an external resistor value or current source applied to the I
This allows the NTE888M’s characteristics to be optimized for input current and power consumption
despite wide variations in operating power supply voltages.

Features:

D ±1.2V to ±18V Operation
D Wide Programming Range
D Offset Null Capability
D No Frequency Compensation Required
D Low Input Bias Currents
D Short–Circuit Protection

SET

input.

Maximum Ratings

Power Supply Voltages, V
Differential Input Voltage, V
Common–Mode Input Voltage, V

VCC and |VEE| < 15V VCC, V
V

and |VEE| ≥ 15V ±15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CC

Offset Null to V
Programming Current, I
Programming Voltage, V

Voltage from I
Output Short–Circuit Duration (Note 1), t
Operating Temperature Range, T
Storage Temperature Range, T
Junction Temperature, T

: (TA = +25°C unless otherwise noted)

, V

CC

EE

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ID

ICM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Voltage, V

EE

SET

set

SET

terminal to GND (VCC –2V) to V

J

– V

off

EE

500µA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

s

0° to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

EE

±0.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CC

Indefinite. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. May be t o GND or either Supply Voltage. Rating applies up to a case temperature of +125°C

or ambient temperature of +70°C and I

SET

≤ 30µA.

Electrical Characteristics:(VCC = +15V, VEE = –15V, I

wise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

= 15µA, TA = +25°C unless other–

SET

Input Offset Voltage V

Offset Voltage Adjustment Range V
Input Offset Current I

Input Bias Current I

Input Resistance r
Input Capacitance c
Input Voltage Range V
Large Signal Voltage Gain A

Output Voltage Swing V

IO

IOR

IO

IB

i

i

ID

VOL

O

RS ≤ 10kΩ – 2 6 mV

0° ≤ TA ≤ +70°C – – 7.5 mV

– 18 – mV
– 2 25 nA

TA = +70°C – – 25 nA
TA = 0°C – – 40 nA

– 15 50 nA
TA = +70°C – – 50 nA
TA = 0°C – – 100 nA

– 5 – MΩ

– 2 – pF

0° ≤ TA ≤ +70°C ±10 – – V
RL ≥ 5kΩ, VO = ±10V 50k 400k – V/V
RL ≥ 75kΩ, VO = ±10V,

0° ≤ T

≤ +70°C

A

50k – – V/V

RL ≥ 5kΩ ±10 ±13 – V
RL ≥ 75kΩ, 0° ≤ TA ≤ +70°C ±10 – – V

Output Resistance r
Output Short–Circuit Current I

o

os

– 1 – kΩ

– 12 – mA

Common–Mode Rejection Ratio CMRR RL ≤ 10kΩ, 0° ≤ TA ≤ +70°C 70 90 – dB
Supply Voltage Rejection Ratio PSRR RL ≤ 10kΩ, 0° ≤ TA ≤ +70°C – 25 200 µV/V
Supply Current ICC, I

EE

– 160 190 µA
0° ≤ TA ≤ +70°C – – 200 µA

Power Dissipation P

D

– 5.7 mW
0° ≤ TA ≤ +70°C – – 6.0 mW

Transient Response (Unity Gain)

Rise Time

t

TLH

Vin = 20mV, RL ≥ 5kΩ, CL = 100pF – 0.35 – µs

Overshoot OS – 10 – %

Slew Rate

S

RL ≥ 5kΩ – 0.8 – V/µs

R