NTE NTE887M Datasheet

NTE887M

Integrated Circuit

Low Power, JFET OP Amplifier

Description:

The NTE887M is a JFET–input operational amplifier in an 8–Lead DIP type package designed as a
low–power version of the NTE857M amplifier . This device features high input impedance, wide band­width, high slew rate, and low input offset and bias current.

Features:

D Very Low Power Consumption
D Typical Supply Current: 200µA
D Wide Common–Mode and Differential Voltage Ranges
D Low Input Bias and Offset Currents
D Common–Mode Input Voltage Range Includes V
D Output Short–Circuit Protection
D High Input Impedance: JFET–Input Stage
D Internal Frequency Compensation
D Latch–Up–Free Operation
D High Slew rate: 3.5V/µs Typ

CC

+

Absolute Maximum Ratings:

Supply Voltage (Note 1), V
Supply Voltage (Note 1), V
Differential Input Voltage (Note 2), V
Input Voltage (Note 1, Note 3), V
Duration of Output Short Circuit (Note 4), t
Continuous Total Dissipation, P

(TA = 0° to +70°C unless otherwise specified)

+ +18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CC

– –18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CC

ID

I

s

D

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TA ≤ +25°C 680mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above +65°C 8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +70°C 640mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

Operating Ambient Temperature Range, T
Storage Temperature range, T

stg

A

Lead Temperature (During Soldering, 1/16” (1.6mm) from case for 10sec), T

L

0° to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260°C. . . . . . . . . . .

Note 1. All voltage values, except differential voltages, are with respect to the midpoint between

V

+ and VCC–.

CC

Note 2. Differential voltages are at the non–inverting input pin with respect to the inverting input pin.
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage

or 15V, whchever is less.

Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages

must be limited to ensure that the dissipation rating is not exceeded.

Electrical Characteristics: (VCC± = ±15V, Note 5 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Offset Voltage V

Temperature Coefficient of

a

IO

VIO

VO = 0,
RS = 50Ω

VO = 0, RS = 50Ω, TA = 0° to +70°C – 10 – µV/°C

TA = +25°C – 3 15 mV
TA = 0° to +70°C – – 20 mV

Input Offset Voltage

Input Offset Current I

IO

VO = 0, Note 6 TA = +25°C – 5 200 pA

TA = 0° to +70°C – – 5 nA

Input Bias Current I

IB

VO = 0, Note 6 TA = +25°C – 30 400 pA

TA = 0° to +70°C – – 10 nA

Common–Mode Input Voltage Range V
Maximim Peak Output Voltage Swing V

ICR

OM

TA = +25°C ±11
RL = 10kΩ, TA = +25°C ±10.0 ±13.5 – V

–12
+15

– V

RL ≥ 10kΩ, TA = 0° to +70°C ±10.0 – – V

Large–Signal Differential Voltage

A

VD

VO = ±10V,

Amplification RL ≥ 10kΩ

Unity–Gain Bandwidth B
Input Resistance r

RL = 10kΩ, TA = +25°C – 1 – MHz

1

TA = +25°C – 10

i

Common–Mode Rejection Ratio CMRR VIC = V

= +25°C

T

A

Supply Volatge Rejection Ratio

±/∆VIO)

(∆V

CC

Total Power Dissipation P
Supply Current I

k

SVR

D

CC

VCC = ±15V to ±9V, VO = 0,

= 50Ω, TA = +25°C

R

S

No Load, VO = 0, TA = +25°C – 6.0 7.5 mW
No Load, VO = 0, TA = +25°C – 200 250 µA

min, VO = 0, RS = 50Ω,

ICR

TA = +25°C 3 6 – V/mV
TA = 0° to +70°C 3 – – V/mV

12

– Ω

70 86 – dB

70 95 – dB

Crosstalk Attenuation Vo1/Vo2AVD = 100, TA = +25°C – 120 – dB

Note 5. All characteristics are measured under open–loop conditions with zero common–mode volt-

age unless otherwise specified.

Note 6. Input bias currents of a FET–input operational amplifier are normal junction reverse currents,

which are temperature sensitive. Pulse techniques must be used that will maintain the junc­tion temperature as close to the ambient temperature as possible.

Operating Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Slew Rate at Unity Gain SR VI = 10V, RL = 10kΩ, CL = 100pF 1.5 3.5 – V/µs
Rise Time t

Overshoot Factor

Equivalent Input Noise Voltage V

(VCC± = ±15V, TA = +25°C unless otherwise specified)

VI = 20mV, RL = 10kΩ, CL = 100pF – 0.2 – µs

r

– 10% –

RS = 100Ω, f = 1kHz – 42 – nV/√Hz

n