NTE NTE871 Datasheet

NTE871
Integrated Circuit
Wideband High Speed Operational Amp
Description:
The NTE871 is a large–signal wideband, high speed operational amplifier which has a unity gain crossover frequency (f imately 110kHz. It can operate at a total supply voltage of from 14 to 36 volts (±7 to ±18 votls when using split supplies) and can provide at least 18V ±15 volt supplies. The NTE871 can be compensated with a single external capacitor and has DC offset adjust terminals for those applications requiring offset null.
The NTE871 circuit contains both bipolar and PMOS transistors on a single monlithic chip and is sup­plied in a 8–Lead TO5 package.
Features:
D High Open–Loop Gain at Video Frequencies: 42dB Typ. at 1MHz D High Unity–Gain Crossover Frequency: f D Wide Power Bandwidth;
= 18V
V
O
D High Slew Rate;
20dB Amplifier: 70V/µs Typ. Unity–Gain Amplifier: 25V/µs Typ.
D Fast Setting Time: 0.6µs Typ. D High Output Current: ±15mA Min. D Single Capacitor Compensation D Offset Null Terminals
) of approximately 38MHz and an open–loop, 3dB corner frequency of approx-
T
: 1.2MHz Typ.
P–P
and 30mA
P–P
= 38MHz Typ.
T
at the output when operating from
P–P
Absolute Maximum Ratings:
Supply Voltage (Between V+ and V– terminals) 36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage ±12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage to GND (Note 1) ±15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Offset Terminal to V– Terminal Voltage ±0.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Current (Note 2) 50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation (Up to T
Derate Above T
A
Operating Temperature Range, T Storage Temperature range. T
= +55°C), P
A
= +55°C 6.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
opr
stg
Lead Temperature (During Soldering), T
D
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
630mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
At distance 1/16” ±1/32” (1.59 ± 0.79mm) from case for 10s max +265°C. . . . . . . . . . . . . . . .
Note 1. If the supply voltage is less than ±15 volts, the maximum input voltage to GND is equal to
the supply voltage.
Note 2. The NTE871 does not contain circuitry to protect against short circuits in the output.
Electrical Characteristics: (TA = +25°C, VCC = ±15V unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Input Offset Voltage V Input Bias Current I Input Offset Current I Low–Frequency Open–Loop
IO IB IO
A
OL
VO = 0 ±0.1V ±1 ±5 mV VO = 0 ±0.1V 0.7 2.0 µA VO = 0 ±0.1V ±0.05 ±0.4 µA VO = ±1V Peak, F = 1kHz, Note 3 56 61 dB
Voltage Gain
Common–Mode Input Voltage
Range
V
ICR
CMRR 76dB ±12 +14
V
13
Common–Mode Rejection Ratio CMRR VI Common Mode = ±12V 76 90 dB Maximum Output Voltage:
Positive
Negative VOM–
Maximum Output Current:
Positive
Negative VOM–
VOM+
VOM+
Differential Input Voltage = 0 ±0.1V RL = 2k
Differential Input Voltage = 0 ±0.1V RL = 250k
+9 +11 – –9 –11
+15 +30 – –15 –30
V
mA
Supply Current I+ VO = 0 ±0.1V, RL 10k 8.5 10.5 mA Power Supply Rejection Ratio PSRR V+ = ±1V, ∆V– = ±1V 60 70 dB
Dynamic
Unity–Gain Crossover Frequency f 1MHz Open–Loop Voltage Gain A Slew Rate
20dB Amplifier
T OL
SR
CC = 0, VO = 0.3V
P–P
f = 1MHz, CC = 0, VO = 10V
P–P
38 MHz
36 42 dB
AV = 10, CC = 0, VI = 1V (Pulse) 50 70
V/µs
Follower Mode AV = 1, CC = 10pF, VI = 10V (Pulse) 25
Power Bandwidth
20dB Amplifier
PBW
(Note 4)
AV = 10, CC = 0, VO = 10V
Follower Mode AV = 1, CC = 10pF, VO = 10V Open–Loop Differential Impedance Z Open–Loop Output Impedance Z Wideband Noise Voltage
eN(Total) BW = 1MHz, RS = 1k 8 µV
F = 1MHz 30 k
I
F = 1MHz 110
O
Referred to Input
Setting Time
t
s
RL = 2k, CL = 20pF 0.6 µs (To Within ±50mV of 9V Output Swing)
Note 3. Low–frequency dynamic characteristics.
Slew Rate
Note 4. Power Bandwidth =
π V
(P–P)
O
P–P
P–P
MHz
0.8 1.2 – – 0.4
RMS
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