NTE NTE87 Datasheet
NTE87 (NPN) & NTE88 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications. These
devices can also be used in power switching circuits such as relay or solenoid drivers, DC–to–DC
converters or inverters.
Features:
D High Safe Operating Area: 1.2A @ 100V
D Completely Characterized for Linear Operation
D High DC Current Gain: h
D Low Saturation Voltage: 2V
D For Low Distortion Complementry Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EB
C
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2) 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2) 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Derate Above 25°C 1.14W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering), T
= 20 Min @ IC = 2A
FE
CEO(sus)
CEX
= +25°C), P
C
stg
D
L
J
thJC
250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.875°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+265°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE88MCP). Matched comple-
mentary pairs have their gain specification (h
) matched to within 10% of each other.
FE
Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CEO
I
CEX
EBO
= 100mA, Note 3 250 – – V
VCE = 250V – – 1 mA
VCE = 250V, V
= 1.5V – – 500 µA
BE(off)
VEB = 5V – – 500 µA
Second Breakdown
Second Breakdown Collector Current
with Base Forward Bias
I
S/b
VCE = 40V, t = 0.5s (non–repetitive) 5 – – A
VCE = 100V, t = 0.5s (non–repetitive) 1.4 – – A
ON Characteristics (Note 3)
DC Current Gain h
FE
VCE = 2V, IC = 2A 20 – 100
VCE = 2V, IC = 4A 5 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 2A, IB = 200mA – – 0.8 V
IC = 4A, IB = 400mA – – 2.5 V
Base–Emitter On Voltage V
BE(on)
VCE = 2V, IC = 4A
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
VCE = 10V, IC = 1A, f
T
VCB = 10V, IE = 0, f
ob
test
test
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
–
– 2 V
= 1MHz 4 – – MHz
= 1MHz – – 500 pF
.350 (8.89)
.215 (5.45)
Emitter
.430
(10.92)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
Loading...