NTE NTE81 Datasheet

NTE81

Silicon NPN Transistor

Dual Differential Amp, General Purpose Switch

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

One Die 575mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

All Die Equal Power 625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C

One Die 3.29mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

All Die Equal Power 3.57mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

One Die 1.8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

All Die Equal Power 2.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C

One Die 10.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

All Die Equal Power 14.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

One Die 97°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

All Die Equal Power 70°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient (Note 1), R

One Die 304°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

All Die Equal Power 280°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Coupling Factors

Q1 – Q2

Junction–to–Ambient 57%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Junction–to–Case 0%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Q1 – Q3 or Q1 – Q4

Junction–to–Ambient 55%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Junction–to–Case 0%. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CEO

CBO

EBO

C

= +25°C), P

A

= +25°C), P

C

stg

D

D

J

Θ

JC

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

Note 1. R

is measured with the device soldered into a typical printed circuit board.

thJA

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

Collector Cutoff Current I
Base Cutoff Current I
ON Characteristics (Note 2)
DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

CEV

BL

FE

= 10mA, IB = 0, Note 2 30 – – V
= 10µA, IE = 0 60 – – V

= 10µA, IC = 0 5 – – V
VCE = 50V, V
VCE = 50V, V

= 3V 15 – – nA

BE(off)

= 3V 30 – – nA

EB(off)

IC = 0.1mA, VCE = 10V 20 50 –
IC = 1.0mA, VCE = 10V 25 55 –
IC = 10mA, VCE = 10V 35 65 –
IC = 150mA, VCE = 1.0V 20 65 –
IC = 150mA, VCE = 10V 40 30 120
IC = 300mA, VCE = 10V 25 75 –

= 150mA, IB = 15mA – 0.2 0.4 V
IC = 300mA, IB = 30mA – 0.35 1.2 V

= 150mA, IB = 15mA 0.6 0.95 1.3 V
IC = 300mA, IB = 30mA – – 2.0 V

Small–Signal Characteristics

Current Gain–Bandwidth Product f

T

IC = 20mA, VCE = 20V,
f = 100MHz

Output Capacitance C
Input Capacitance C

obo

ibo

VCB = 10V, IE = 0, f = 100kHz – 3.5 8.0 pF
VEB = 0.5V, IC = 0, f = 100kHz – 15 20 pF

Switching Characteristics

Delay Time t
Rise Time t
Storage Time t
Fall Time t

d

s

VCC = 30V, IC = 150mA,
V

r

= 0.5V, IB1 = 15mA

BE(off)

VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA

f

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

200 250 – MHz

– – 15 µs
– – 30 µs
– – 250 µs
– – 60 µs