NTE NTE784 Datasheet
NTE784
Integrated Circuit
Wide–Band Power Amplifier
Description:
The NTE784 is a multistage, multipurpose, wide–band power amplifier on a single monolithic silicon
chip. This device employs a highly versitile and stable direct–coupled circuit configuration featuring
wide frequency range, high voltage and power gain, and high power output. These features plus inherent stability over a wide temperature range make the NTE784 extremely useful for a wide variety
of applications in military, industrial, and commercial equipment.
The NTE784 is particularly suited for service as a class B power amplifier and can provide a maximum
power output of 1W from a 12V DC supply with a typical power gain of 75dB.
Features:
D High Power Output
D Wide Frequency Range
D High Power Gain
D Single Power Supply for Class B Operation with Transformer
D Built–In Temperature Tracking Voltage Regulator Provides Stable Operation
Applications:
D AF Power Amplifiers for Portable and Fixed Sound and Communications Systems
D Servo–Control Amplifier
D Wide–Band Linear Mixers
D Video Power Amplifiers
D Transmission–Line Driver Amplifier (Balanced and Unbalanced)
D Fan–In and Fan–Out Amplifiers for Computer Logic Circuits
D Lamp–Control Amplifiers
D Motor–Control Amplifiers
D Power Multivibrators
D Power Switches
Absolute Maximum Ratings:
Power Dissipation (Without Heatsink, TA = +25°C), P
D
Derate Above 25°C 6.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (With Heatsink, TC = +25°C), P
D
Derate Above 55°C 16.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
Storage Temperature Range, T
opr
stg
Maximum Thermal Resistance, Junction–to–Case, R
thJC
–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V
Idle Currents I4, I
Peak Output Currents I4, I
Cutoff Currents I4, I
Differential Amplifier Current Drain I
Total Current Drain I
(BR)CER
V
(BR)CEO
CC1
CC1
I
CC2
7
7
7
+
Differential Amplifier Input Pin Voltages V2, V3V
Regulator Pin Voltage V
Collector–Emitter Cutoff Current I
Emitter–Base Cutoff Current I
Collector–Base Cutoff Current I
Forward Current Transfer Ratio h
11
CEO
EBO
CBO
FE1
Bandwidth BW V
Maximum Power Output P
Sensitivity e
Input Resistance R
O(max)
IN
IN3
(Q6 & Q7) IC = 10mA 25 – – V
(Q1) IC = 0.1mA 10 – – V
(Q6 & Q7) V
(Q6 & Q7) V
(Q6 & Q7) V
V
= 9V, V
CC1
V
= 9V, V
CC1
= 9V, V
CC1
V
= 9V, V
CC1
(Q) V
CC1
(Q) V
CC1
(Q) V
CC1
(Q1) IC = 3mA, V
= 6V, V
CC1
V
= 6V, V
CC1
V
= 9V, V
CC1
V
= 9V, V
CC1
V
= 9V, V
CC1
P
= 800mW, RCC = 200Ω
OUT
V
= 6V, V
CC1
=9V, V
CC1
=9V, V
CC1
=9V, V
CC1
= 9V 6.3 9.4 12.5 mA
CC2
= 9V 14.5 21.5 30.0 mA
CC2
= 2V – 11.1 – V
CC2
= 2V – 2.35 – V
CC2
= 2V – 5.5 – mA
CC2
= 2V 180 – – mA
CC2
= 2V – – 1.0 mA
CC2
= 10V – – 100 µA
= 3V – – 0.1 µA
= 3V – – 0.1 µA
= 6V 30 75 –
CC1
= 6V, –3dB – 8 – MHz
CC2
= 6V, RCC = 130Ω 200 300 – mW
CC2
= 9V, RCC = 130Ω 400 550 – mW
CC2
= 12V, RCC = 200Ω 800 1000 – mW
CC2
= 12V,
CC2
= 6V, Pin3 to GND – 1000 – Ω
CC2
– 50 100 mV
Pin Connection Diagram
(Top View)
Optional Bias Short to V
V
CC
Buffer Amp Input Emitter Output Q
2.1V Bias Point Emitter Output Q
GND
10
11
12
Buffer Amp Output
CC
8
9
Collector Output Q
6
7
2
6
5
4
Collector Output Q
1
3
1
2
Differential Amp Input “A”
Differential Amp Input “B”
2
1
1
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