NTE NTE77 Datasheet
NTE77
Silicon NPN Transistor
Broadband CATV Driver
Description:
The NTE77 is an NPN transistor in a TO39 type case designed to be utilized in broadband and linear
amplifier circuitry requiring low noise and low intermodulation distortion. This device is suitable for
use in CATV driver stages in trunk line, bridger, and line extender amplifiers.
Features:
D High Gain–Bandwidth Product: fT = 1.5GHz Typ
D Low Intermodulation, Low Cross–Modulation Distortion: X–MOD = –57dB
D Low Noise Figure: NF = 2.7dB Typ
D Low Output Capacitance: C
= 3.5pF Max @ VCB = 30V
ob
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
EBO
Maximum Collector Current, I
Total Device Dissipation (T
Junction Temperature, T
J
Storage Temperature Range, T
(TC = +25°C unless otherwise specified)
CBO
CEO
C
= +25°C), P
A
stg
tot
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
(TC = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CEO
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= 5mA, IB = 0, Note 1 30 – – V
= 0.1mA, IE = 0, Note 1 50 – – V
= 0.1mA, IC = 0 5 – – V
VCE =, 28V, IB = 0 – – 0.1 mA
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulsed through 25mH Inductor.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
FE
VCE = 15V, IC = 50mA 30 – 300
Dynamic Characteristics
Current Gain–Bandwidth Product f
T
VCE = 15V, IC = 50mA,
1500 1800 – MHz
f = 200MHz
Collector Output Capacitance C
Collector Input Capacitance C
ob
VCB = 30V, IE = 0, f = 1MHz – 2.5 3.5 pF
VEB = 0.5V, IC = 0, f = 1MHz – 8.0 10 pF
ib
Functional Test
Noise Figure Narrow Band NF
VCE = 10V, IC = 10mA,
NB
– 2.7 – dB
f = 200MHz
Broad Band NF
VCE = 15V, IC = 50mA,
BB
– 7.0 8.0 dB
f = 216MHz
Power Gain at Optimum Noise Figure G
VE
VCE = 15V, IC = 50mA,
6.8 7.2 – dB
f = 260MHz
Cross–Modulation X–MOD VCE = 15V, IC = 50mA,
= +45dBmV, Note 2
P
O
Second Order Distortion 2nd O VCE = 15V, IC = 50mA,
= +45dBmV, Note 3
P
O
– –60 –57 dB
– –60 –57 dB
Note 2. 12 Channel Flat –– NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW
Note 3. Channel 2 and Channel G Intermod Product on Channel 13
Emitter
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)
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