NTE NTE75 Datasheet

NTE75

Silicon NPN Transistor

High Power Amplifier, Switch

(Stud Mount)

Description:

The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.

Features:

D Fast Switching: tr, tf = 300ns (Max)
D Low Saturation Voltage: 250mV max @ 1A

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Power Dissipation, P

CBO

CEO

EBO

C

D

TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +100°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Operating Temperature Range, T
Storage Temperature Range, T

opr

stg

Thermal Resistance, Junction–to–Case, R

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

110V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.33°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Cutoff Current I

Collector–Base Cutoff Current I
Emitter–Base Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

CEO

I

CEX
CBO
EBO

= 10µA 110 – – V
= 100mA, Note 1 80 – – V

= 10µA 8 – – V
VCE = 60V – – 100 µA
VCE = 110V, VEB = 500mV – – 10 µA
VCB = 80V – – 0.4 µA
VEB = 6V – – 0.4 µA

Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Ω

Parameter Symbol Test Conditions Min Typ Max Unit

DC Current Gain (Note 1) h

FE

VCE = 5V, IC = 50mA 40 – –
VCE = 5V, IC = 1A 40 – 120
VCE = 5V, IC = 1A, TA = –65°C 15 – –
VCE = 5V, IC = 5A 15 – –

Collector Saturation Voltage V

CE(sat)IC

= 1A, IB = 100mA, Note 1 – – 0.25 V
IC = 5A, IB = 500mA, Note 1 – – 1.5 V

Base Saturation Voltage V
Base ON Voltage V

BE(sat)IC
BE(on)

AC Current Gain h
Current Gain–Bandwidth Product f
Output Capacitance C
Delay Time t
Rise Time t
Storage Time t
Fall Time t

FE

T
ob
d

r

s

f

= 1A, IB = 100mA, Note 1 – – 1.2 V
VCE = 2V, IC = 1A, Note 1 – – 1.2 V
VCE = 5V, IC = 50mA, f = 1kHz 40 – 120
VCE = 10V, IC = 1A, f = 10MHz 20 – 120 MHz
VCE = 10V, IE = 0, f = 1MHz – – 150 pF
VCC = 20V, IC = 1A,

IB1 = –IB2 = 100mA,
Pulse Width = 2µs,

Pulse Width = 2µs,
Duty Cycle ≤ 2%,
Source Impedance = 50

Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.

– – 60 ns
– – 300 ns
– – 1.7 µs
– – 300 ns

Emitter

.760

(19.3)

Max

Base

.190

(4.82)

Dia

.347 (8.82)

Dia

.432

(10.95)

Collector/
Stud

.370

(9.39)

.115 (2.92)

10–32 NF–2A

.078

(1.97)

Max

.420

(10.66)