NTE NTE75 Datasheet
NTE75
Silicon NPN Transistor
High Power Amplifier, Switch
(Stud Mount)
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
D Fast Switching: tr, tf = 300ns (Max)
D Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Power Dissipation, P
CBO
CEO
EBO
C
D
TA = +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100°C 30W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Temperature Range, T
Storage Temperature Range, T
opr
stg
Thermal Resistance, Junction–to–Case, R
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
110V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.33°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Cutoff Current I
Collector–Base Cutoff Current I
Emitter–Base Cutoff Current I
(TA = +25°C unless otherwise specified)
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CEO
I
CEX
CBO
EBO
= 10µA 110 – – V
= 100mA, Note 1 80 – – V
= 10µA 8 – – V
VCE = 60V – – 100 µA
VCE = 110V, VEB = 500mV – – 10 µA
VCB = 80V – – 0.4 µA
VEB = 6V – – 0.4 µA
Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Ω
Parameter Symbol Test Conditions Min Typ Max Unit
DC Current Gain (Note 1) h
FE
VCE = 5V, IC = 50mA 40 – –
VCE = 5V, IC = 1A 40 – 120
VCE = 5V, IC = 1A, TA = –65°C 15 – –
VCE = 5V, IC = 5A 15 – –
Collector Saturation Voltage V
CE(sat)IC
= 1A, IB = 100mA, Note 1 – – 0.25 V
IC = 5A, IB = 500mA, Note 1 – – 1.5 V
Base Saturation Voltage V
Base ON Voltage V
BE(sat)IC
BE(on)
AC Current Gain h
Current Gain–Bandwidth Product f
Output Capacitance C
Delay Time t
Rise Time t
Storage Time t
Fall Time t
FE
T
ob
d
r
s
f
= 1A, IB = 100mA, Note 1 – – 1.2 V
VCE = 2V, IC = 1A, Note 1 – – 1.2 V
VCE = 5V, IC = 50mA, f = 1kHz 40 – 120
VCE = 10V, IC = 1A, f = 10MHz 20 – 120 MHz
VCE = 10V, IE = 0, f = 1MHz – – 150 pF
VCC = 20V, IC = 1A,
IB1 = –IB2 = 100mA,
Pulse Width = 2µs,
Pulse Width = 2µs,
Duty Cycle ≤ 2%,
Source Impedance = 50
Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.
– – 60 ns
– – 300 ns
– – 1.7 µs
– – 300 ns
Emitter
.760
(19.3)
Max
Base
.190
(4.82)
Dia
.347 (8.82)
Dia
.432
(10.95)
Collector/
Stud
.370
(9.39)
.115 (2.92)
10–32 NF–2A
.078
(1.97)
Max
.420
(10.66)
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