NTE NTE72 Datasheet

NTE72

Silicon NPN Transistor

High Current Amp, Fast Switch

Features:

D High Power: 100W @ TC = +50°C, VCE = 40V
D High Voltage: V
D High Current Saturation Voltage: V
D High Frequency: f
D Isolated Collector Package, No Isolating hardware Required

= 80V Min

CEO

= 30MHz Min

T

CE(sat)

= 1.5V @ 10A

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage (Note 2), V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 60sec max), T

(Note 1)

CES

CEO

= +50°C, VCE = 40V), P

C

opr

stg

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may

be impaired.

Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.

Electrical Characteistics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Sustaining Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
DC Pulse Current Gain (Note 3) h

(TC = +25°C unless otherwise specified)

CEO(sus)IC
(BR)CES)IC

(BR)EBOIE

FE

= 200mA, IB = 0, Notes 2 & 3 80 – – V
= 1mA, VBE = 0 100 – – V

= 1mA, IC = 0 6 – – V
IC = 100mA, VCE = 5V 50 95 –
IC = 5A, VCE = 5V 70 108 200
IC = 5A, VCE = 5V, TC = –55°C 35 51 –
IC = 10A, VCE = 5V 45 91 –

Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.
Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%.

Electrical Characteistics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

High Frequency Current Gain h
Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

Base–Emitter ON Voltage V
Collector Cutoff Current I
Collector Reverse Current I
Emitter Cutoff Current I
Collector–Base Capacitance C

CE(sat)IC

BE(sat)IC

BE(on)IC

CES
CEX
EBO

IC = 2A, VCE = 5V, f = 20MHz 2.0 2.8 –

fe

= 5A, IB = 0.5A, Note 3 – 0.55 0.9 V
IC = 10A, IB = 1A, Note 3 – 1.1 1.5 V

= 5A, IB = 0.5A, Note 3 – 1.2 1.8 V
IC = 10A, IB = 1A, Note 3 – 1.7 2.2 V

= 5A, VCE = 5V, Note 3 – – 1.8 V
VCE = 60V, VBE = 0 – 0.014 1.0 µA
VCE = 60V, VEB = 2V, TC = +150°C – – 500 µA
VEB = 5V, IC = 0 – – 1.0 µA
VCB = 10V, IE = 0, f = 1MHz – 235 275 pF

cb

Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%.

Base

.400

(10.16)

.682

(17.32)

Emitter Collector/

.600 (19.15)

Dia

.061 (1.53) Dia

Isolated Stud

.755

(19.15)

.412

(10.44)

.090 (2.28) Max

1/4–28 UNF–2A

.115

(2.93)

.440

(11.17)