NTE NTE7144 Datasheet

NTE7144

Integrated Circuit

BIMOS Operational Amplifier

w

/MOSFET Input, Bipolar Output

Description:

The NTE7144 is an integrated circuit operational amplifier in an 8–Lead Mini–DIP type package that
combines the advantages of high–voltage PMOS transistors with high–voltage bipolar transistors on
a single monolithic chip. This device features gate–protected MOSFET (PMOS) transistors in the in­put circuit to provide very–high–input impedance, very–low–input current, and high–speed perfor­mance. The NTE7144 operates at supply voltages from 4V to 36V (either single or dual supply) and
is internally phase–compensated to achieve stable operation in unity–gain follower operation.

The use of PMOS field–effect transistors in the input stage results in common–mode input–voltage
capability down to 0.5V below the negative–supply terminal, an important attribute for single–supply
applications. The output stage uses bipolar transistors and includes built–in protection against dam­age from load–terminal short–circuiting to either supply–rail or to GND.

Features:

D MOSFET Input Stage:

Very High Input Impedance
Very Low Input Current
Wide Common–Mode Input Voltage Range
Output Swing Complements Input Common–Mode Range

D Directly Replaces Industry Type 741 in Most Applications

Applications:

D Ground–Referenced Single–Supply Amplifiers in Automobile and Portable Instrumentation
D Sample and Hold Amplifiers
D Long–Duration Timers/Multivibrators (Microseconds – Minutes – Hours)
D Photocurrent Instrumentation
D Peak Detectors
D Active Filters
D Comparators
D Interface in 5V TTL Systems and other Low–Supply Voltage Systems
D All Standard Operational Amplifier Applications
D Function Generators
D Tone Controls
D Power Supplies
D Portable Instruments
D Intrusion Alarm Systems

Absolute Maximum Ratings:

DC Supply Voltage (Between V+ and V– Terminals) 36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential–Mode Input Voltage ±8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Common–Mode DC Input Voltage (V+ +8V) to (V– –0.5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input–Terminal Current 1mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Device Dissipation (Without Heatsink), P

D

630mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Linearly Above +55°C 6.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Device Dissipation (With Heatsink), P

D

Derate Linearly Above +55°C 16.7mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T
Storage Temperature Range, T

opr

stg

Lead Temperature (During Soldering, 1/16” from case, 10sec max), T

L

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+265°C. . . . . . . . . . . . . . . . .

Output Short–Circuit Duration (Note 1) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Short circuit may be applied to GND or to either supply.

Electrical Characteristics: (TA = +25°C, V+ = +15V, V– = –15V unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Offset Voltage |VIO| – 2 5 mV
Input Offset Current |IIO| – 0.5 20 pA

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input Current I
Large–Signal Voltage Gain A

Common–Mode Rejection Ratio CMRR – 32 320 µV/V

Common–Mode Input–Voltage

Range

Power Supply Rejection Ratio ∆VIO/∆V – 100 150 µV/V

Maximum Output Voltage VOM+

Supply Current I+ – 4 6 mA
Device Dissipation P
Input Offset Voltage Temp. Drift ∆VIO/∆T – 6 – µA/°C
Input Resistance R
Input Capacitance C
Output Resistance R
Equivalent Wideband Input Noise

Voltage

I

Note 2

OL

V

ICR

PSSR 76 80 – dB

RL = 2kΩ

VOM– –14 –14.4 – V

D

I
I

O

e

BW = 140kHz, RS = 1MΩ – 48 – µV

n

– 10 40 pA

20k 100k – V/V

86 100 – dB

70 90 – dB

–15 –15.5

+12.5

+12 +13 – V

– 120 180 mW

– 1.5 – TΩ
– 4 – pF
– 60 – Ω

+12 V

to

Equivalent Input Noise Voltage e

Short–Circuit Current to Opposite Supply

Source IOM+ – 40 – mA

Sink IOM– – 18 – mA

Note 2. VO = 26V

, +12V, –14V and RL = 2kΩ.

P–P

RS = 100Ω f – 1kHz – 40 – nV/√Hz

n

f = 10kHz – 12 – nV/√Hz