NTE NTE7141 Datasheet

NTE7141

Integrated Circuit

Dual BIMOS Operational Amplifier

w

/MOSFET Input, Bipolar Output

Description:

The NTE7141 is a dual, operational amplifier in an 8–Lead Mini–DIP type package that combines the
advantages of MOS and bipolar transistors on the same monolithic chip. The gate–protected MOS­FET (PMOS) input transistors provide high input impredance and a wide common–mode input volt­age range (typically to 0.5V below the negative supply rail). The bipolar output transistors allow a wide
output voltage swing and provide a high output current capability.

Features:

D Internally Compensated
D MOSFET Input Stage:

Very High Input Impedance
Very Low Input Current
Wide Common–Mode Input Voltage Range
Rugged Input Stage – Bipolar Diode Protected

D Directly Replaces Industry Type 1458 in Most Applications
D Operation From 4V–to–36V Single or Dual Supplies
D Characterized for ±15V Operation for TTL Supply Systems with Operation down to 4V
D Wide Bandwidth
D High Voltage–Follower Slew Rate
D Output Swings to Within 0.5V of Negative Supply at V+ = 5V, V– = 0

Applications:

D Ground–Referenced Single–Supply Amplifiers in Automobile and Portable Instrumentation
D Sample and Hold Amplifiers
D Long–Duration Timers/Multivibrators (Microseconds – Minutes – Hours)
D Photocurrent Instrumentation
D Active Filters
D Intrusion Alarm Systems
D Comparators
D Instrumentation Amplifiers
D Function Generators
D Power Supplies

Absolute Maximum Ratings:

DC Supply Voltage (Between V+ and V– Terminals) 36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Voltage Range 4 to 36V or ±2 to ±18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential–Mode Input Voltage ±8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Common–Mode DC Input Voltage (V+ +8V) to (V– –0.5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input–Terminal Current 1mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Device Dissipation, P

D

630mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Linearly Above +55°C 6.67mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T
Storage Temperature Range, T

opr

stg

Lead Temperature (During Soldering, 1/16” from case, 10sec max), T

L

–40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+265°C. . . . . . . . . . . . . . . . .

Output Short–Circuit Duration (Note 1) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Short circuit may be applied to GND or to either supply. Temperature and/or supply voltages

must be limited to keep dissipation within maximum rating.

Electrical Characteristics: (V+ = +15V, V– = –15V unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Offset Voltage |VIO| TA = +25°C – 5 15 mV

TA = –40° to +85°C – 10 – mV

Input Offset Current |IIO| TA = +25°C – 0.5 30 pA

TA = +85°C – 32 – pA

Input Current I

Large–Signal Voltage Gain A

Common–Mode Rejection Ratio CMRR TA = +25°C – 32 320 µV/V

Common–Mode Input–Voltage

Range

V

ICR

TA = +25°C – 10 50 pA

I

TA = +85°C – 640 – pA
Note 2 TA = +25°C 20k 100k – V/V

OL

86 100 – dB

TA = –40° to +85°C – 63k – V/V

– 96 – dB

70 90 – dB

TA = –40° to +85°C – 32 – µV/V

– 90 – dB

TA = +25°C –15 –15.5

to

+12.5

TA = –40° to +85°C – –15

to

+12.3

+11 V

– V

Power Supply Rejection Ratio ∆VIO/∆V TA = +25°C – 100 150 µV/V

PSSR 76 80 – dB

∆VIO/∆V TA = –40° to +85°C – 150 – µV/V

PSSR – 76 – dB

Note 2. VO = 26V

, +12V, –14V and RL = 2kΩ.

P–P