NTE NTE7126, NTE7125 Datasheet

NTE7125 & NTE7126
Integrated Circuit
Switching Regulator
Description:
The NTE7125 and NTE7126 are integrated circuits in a 12–Lead SIP type package incorporating all the power switching, amplifier, error detection, and overcurrent protection circuits required in a self– extcitation type semi–regulated off–line switching regulator. As a result, these devices can be used in the design of switching power supplies with a minimal number of external components. Further­more, the adoption of MOSFET power switching elements supports a higher oscillation frequency than possible with bi–polar transistors. This allows smaller pulse transformers and capacitors to be used, making it possible to construct miniature power supply systems.
Features:
D Power MOSFET Devices D Ideal for Semi–Regulated Control Switching Supplies D Error Detection Circuit On–Chip (40.5V ±0.5V Set Refernce Voltage) D Overcurrent Protection Circuit On–Chip D Higher Oscillation Frequency allows the use of Smaller Pulse Transformers D IMST Substrate acts as an Electromagnetic Shield, makinf Low–Noise Designs Possible
Applications:
D CRT/CTV Power Supplies D Office Automation Equipment Power Supplies
Absolute Maximum Ratings:
(TA = +25°C unless otherwise specified)
Operating Substrate Temperature (Recommended value is +105°C), TCmax +115°C. . . . . . . . . . . .
AC Input Voltage, V OPerating Temperature Range, T Storage Temperature Range, T Maximum Output Power (V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC
opr
stg
= 135V), WOmax
O
–10° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–30° to +115°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE7125 110W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE7126 145W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TR1
Drain Current, I
D
NTE7125 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE7126 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse Drain Current, I Drain Reverse Current, I Gate–Source Voltage, V
D (pulse)
DR
GSS
140V
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
rms
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings (Cont’d): (TA = +25°C unless otherwise specified) TR1 (Cont’d)
Allowable Power Dissipation, P
D
Chip Junction Temperature, TJmax +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJ–C
ZD1
Allowable Power Dissipation, P Chip Junction Temperature, T Thermal Resistance, Junction–to–Case, R
ZD1
J (ZD1)
max +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJ–C (ZD1)
78.1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Allowable Operating Ranges:
Pin4 Input Voltage, V Oscillator Frequency, f
4
OSC
Operating Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage Setting IIN = 8mA 40.0 40.5 41.0 V Output Voltage Temperature Coefficient TC = 0° to +105°C, IIN = 8mA 7 mV/°
TR1
Drain–Source Breakdown Voltage V Gate–Source Cutoff Voltage V ON Resistance
NTE7125 NTE7126
Input Capacitance C
ZD1
Zener Voltage V
(TA = +25°C unless otherwise specified)
(TA = +25°C, TC = +25°C unless otherwise specified)
(BR)DSSID
GS(off)ID
R
DS(on)ID
iss
Z
Pin Connection Diagram
= 10mA, VGS = 0V 500 V = 1mA, VDS = 10V 2.0 3.0 V = 2.5A, VGS = 10V
1.4
0.8
VDS = 10V, VGS = 0V, f = 1MHz 800 pF
IZ = 5mA 23.7 26.3 V
(Front View)
±6 to ±24V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20 to 120kHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.8
1.8
C
Ω Ω
TR1 Drain
12 11 TR1 Drain 10
No Pin
9
TR1 Source
8
TR1 Source
7
OCP Setting Level Input
6
Amplifier Circuit Control
5
TR1 Gate Drive Voltage Input
4
GND
3 2
Error Detection Level
1
V
(40.5V typ) Input
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