NTE NTE7126, NTE7125 Datasheet

NTE7125 & NTE7126

Integrated Circuit

Switching Regulator

Description:

The NTE7125 and NTE7126 are integrated circuits in a 12–Lead SIP type package incorporating all
the power switching, amplifier, error detection, and overcurrent protection circuits required in a self–
extcitation type semi–regulated off–line switching regulator. As a result, these devices can be used
in the design of switching power supplies with a minimal number of external components. Further­more, the adoption of MOSFET power switching elements supports a higher oscillation frequency
than possible with bi–polar transistors. This allows smaller pulse transformers and capacitors to be
used, making it possible to construct miniature power supply systems.

Features:

D Power MOSFET Devices
D Ideal for Semi–Regulated Control Switching Supplies
D Error Detection Circuit On–Chip (40.5V ±0.5V Set Refernce Voltage)
D Overcurrent Protection Circuit On–Chip
D Higher Oscillation Frequency allows the use of Smaller Pulse Transformers
D IMST Substrate acts as an Electromagnetic Shield, makinf Low–Noise Designs Possible

Applications:

D CRT/CTV Power Supplies
D Office Automation Equipment Power Supplies

Absolute Maximum Ratings:

(TA = +25°C unless otherwise specified)

Operating Substrate Temperature (Recommended value is +105°C), TCmax +115°C. . . . . . . . . . . .

AC Input Voltage, V
OPerating Temperature Range, T
Storage Temperature Range, T
Maximum Output Power (V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

AC

opr

stg

= 135V), WOmax

O

–10° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–30° to +115°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE7125 110W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE7126 145W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TR1

Drain Current, I

D

NTE7125 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE7126 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse Drain Current, I
Drain Reverse Current, I
Gate–Source Voltage, V

D (pulse)

DR

GSS

140V

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

rms

20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Absolute Maximum Ratings (Cont’d): (TA = +25°C unless otherwise specified)
TR1 (Cont’d)

Allowable Power Dissipation, P

D

Chip Junction Temperature, TJmax +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Case, R

thJ–C

ZD1

Allowable Power Dissipation, P
Chip Junction Temperature, T
Thermal Resistance, Junction–to–Case, R

ZD1

J (ZD1)

max +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJ–C (ZD1)

78.1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.6°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Allowable Operating Ranges:

Pin4 Input Voltage, V
Oscillator Frequency, f

4

OSC

Operating Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Output Voltage Setting IIN = 8mA 40.0 40.5 41.0 V
Output Voltage Temperature Coefficient TC = 0° to +105°C, IIN = 8mA – 7 – mV/°

TR1

Drain–Source Breakdown Voltage V
Gate–Source Cutoff Voltage V
ON Resistance

NTE7125
NTE7126

Input Capacitance C

ZD1

Zener Voltage V

(TA = +25°C unless otherwise specified)

(TA = +25°C, TC = +25°C unless otherwise specified)

(BR)DSSID

GS(off)ID

R

DS(on)ID

iss

Z

Pin Connection Diagram

= 10mA, VGS = 0V 500 – – V
= 1mA, VDS = 10V 2.0 – 3.0 V
= 2.5A, VGS = 10V

–

1.4

–

0.8

VDS = 10V, VGS = 0V, f = 1MHz – 800 – pF

IZ = 5mA 23.7 – 26.3 V

(Front View)

±6 to ±24V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20 to 120kHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.8

1.8

C

Ω
Ω

TR1 Drain

12
11 TR1 Drain
10

No Pin

9

TR1 Source

8

TR1 Source

7

OCP Setting Level Input

6

Amplifier Circuit Control

5

TR1 Gate
Drive Voltage Input

4

GND

3
2

Error Detection Level

1

V

(40.5V typ) Input

ref