NTE NTE71 Datasheet

NTE71

Silicon NPN Transistor

High Current Amp, Fast Switch

Description:

The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base VOltage, V

CBO

CEO

EBO

Continuous Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T

B

= +25°C), P

C

Storage Temperature Range, T

C

stg

D

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Emitte Cutoff Current I
Collector Cutoff Current I

ON Characteristics (Note 1)
DC Current Gain h
Collector Saturation Voltage V
Base–Emitter Voltage V

(TC = +25°C unless otherwise spcified)

(BR)CEO(sus)IC

EBO
CEX

FE

CE(sat)

BE

= 100mA 150 – – V
VEB = 10V – – 250 µA
VCE = 150V, VBE = –1.5V – – 2 mA
VCE = 150V, VBE = –1.5V,

T

= +150°C

C

VCE = 3V, IC = 10A 10 – 50
IC = 10A, IB = 1.5A – – 1.5 V
IC = 10A, IB = 1.5A – – 2.5 V

Note 1. Pulse test: Pulse Width = 300µs, Duy Cycle ≤ 2%.

– – 20 mA

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise spcified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Small–Signal Current Gain h
Turn–On Time t
Turn–Off Time t
Rise Time t
Storage Time t
Fall Time t

Base

.500

(12.7)

on
off

VCE = 3V, IC = 10A, f = 1MHz 0.6 – –

fe

VCC = 30V, IC = 10A, IB1 = 1.5A,
IB2 = 1.5A

r
s

f

– – 3.5 µs
– – 12.0 µs
– – 3.5 µs
– – 6.0 µs
– – 6.0 µs

.865

(21.95)

Emitter

.760 (19.3) Dia

.083 (2.1) Dia

.984

(25.0)

.129 (3.3)

5/16–24 UNF

.105

(2.65)

Max

Collector/Stud

.083 (2.1) Dia

.503

(12.6)

.477

(12.1)