NTE NTE70 Datasheet
NTE70
Silicon NPN Transistor
High Voltage Power Amp, Switch
Description:
The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes
a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
CBO
CEO
EBO
C
B
= +25°C), PD 250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.7°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Emitter Cutoff Current I
Collector Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
: (TC = +25°C unless otherwise specified)
(BR)CEOIC
EBO
CEX
FE
CE(sat)IC
BE(sat)IC
= 50mA 150 – – V
VEB = 6V – – 100 µA
VCE = Rated VCB, VEB = 1.5V – – 10 µA
VCE = Rated VCB, VEB = 1.5V, TC = +150°C – – 1.0 mA
VCE = 4V, IC = 20A 50 – –
= 50A, IB = 10A – – 3.0 V
= 20A, IB = 2A – – 1.8 V
IC = 50A, IB = 10A – – 3.5 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Small–Signal Current Gain h
Collector–Base Capacitance C
Rise Time t
Storage Time t
Fall Time t
.500
(12.7)
fe
ob
r
s
f
Base
VCE = 10V, IC = 1A, f = 1MHz 3.0 – –
VCB = 10V, IE = 0, f = 0.1MHz – – 600 pF
– – 0.35 µs
VCC = 80V, IC = 20A,
IB1 = 2A, IB2 = 2A
I = 2A, I = 2A
– – 0.80 µs
– – 0.25 µs
.865
(21.95)
Emitter
.760 (19.3) Dia
.083 (2.1) Dia
.984
(25.0)
.129 (3.3)
5/16–24 UNF
.105
(2.65)
Max
Collector/Stud
.083 (2.1) Dia
.503
(12.6)
.477
(12.1)
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