NTE NTE69 Datasheet

Absolute Maximum Ratings:

NTE69

Silicon NPN Transistor

UHF/VHF Amplifier

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CBO

EBO

C

= +25°C), P

A

D

Derate above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (T

= +25°C), P

C

D

Derate above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Tange, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

Thermal Resistance, Junction–to–Ambient (Note 1), R
Note 1 R

Electrical Characteristics

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Colletor–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V

ON Characteristics

is measured with the device soldered into a typical printed circuit board.

thJA

: (TA = +25°C unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

= 1mA, IB = 0, Note 2 25 – – V
= 100µA, IE = 0 35 – – V
= 100µA, IC = 0 3 – – V

thJA

25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

357°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capaciatnce C
Collector–Base Time Constant rbC

FE
CE(sat)IC
BE(sat)IC

obo

T

VCE = 4V, IC = 4mA 25 60 –

= 10mA, IB = 1mA – 200 350 mV
= 10mA, IB = 1mA – 750 950 mV

VCE = 12V, IC = 4mA, f = 100MHz 750 1100 – MHz
VCB = 10V, IE = 0, f = 1MHz – 0.8 1.0 pF
VCE = 12V, IE = 4mA, f = 31.8MHz – – 9.5 ps

c

Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.021 (.445) Dia Max

B E C

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max

.205 (5.2) Max

.105 (2.67) Max