NTE NTE68, NTE388 Datasheet

NTE388 (NPN) & NTE68 (PNP)

Silicon Complementary Transistors

General Purpose High Power Audio,

Disk Head Positioner for Linear Applications

Description:

The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.

Features:

D High Safe Operating Area: 2A @ 80V
D High DC Current Gain: h

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

Continuous 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 2) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Base Current, I
Total Power Dissipation (T

Derate Above 25°C 1.43W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

= 15 Min @ IC = 8A

FE

CEO
CEX

CBO

B

= +25°C), P

C

stg

D

J

thJC

250V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.70°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched comple-

mentary pairs have their gain specification (h

) matched to within 10% of each other.

FE

Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

CEO(sus)IC

CEX

I

CEO
EBO

= 100mA, IB = 0, Note 3 250 – – V

VCE = 250V, V

= 1.5V – – 250 µA

BE(off)

VCE = 200V, IB = 0 – – 500 µA
VEB = 5V, IC = 0 – – 500 µA

Second Breakdown

Second Breakdown Collector Current

with Base Forward Bias

I

S/b

VCE = 50V, t = 0.5s (non–repetitive) 5 – – µA
VCE = 80V, t = 0.5s (non–repetitive) 2 – – µA

ON Characteristics

DC Current Gain h

FE

VCE = 4V, IC = 8A 15 – 60
VCE = 4V, IC = 16A 5 – –

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 8A, IB = 800mA – – 1.4 V

IC = 16A, IB = 3.2A – – 4.0 V

Base–Emitter On Voltage V

BE(on)

VCE = 4V, IC = 8A

Dynamic Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C

VCE = 10V, IC = 1A, f

T

VCB = 10V, IE = 0, f

ob

test

test

Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.

–

– 2.2 V

= 1MHz 4 – – MHz

= 1MHz – – 500 pF

.350 (8.89)

.215 (5.45)

Emitter

.430

(10.92)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating
Plane

.040 (1.02).312 (7.93) Min

1.187

(30.16)

.665

(16.9)

.156 (3.96) Dia
(2 Holes)

.188 (4.8) R Max

.525 (13.35) R Max

Collector/CaseBase