NTE NTE67 Datasheet

NTE67

MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Description:

The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.

Features:

D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability

Absolute Maximum Ratings:

Drain–Source Voltage (TJ = +25°C to +150°C), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I

Pulsed Drain Current (Note 2), I
Pulsed Gate Current, I
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I
Total Power Dissipation (T

Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), R

DS(ON)

DSS

= 1MΩ, TJ = +25°C to +125°C), V

GS

GS

D

DGR

TC = +25°C 4.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +100°C 3.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DM

GM

AS

AS

= +25°C), P

C

D

Derate Above 25°C 0.6W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

stg

L

thJC

thJA

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thCS

+300°C. . . . . . . . . . . . . . . . . . .

1.67K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.24K/W

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400V. . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

290mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, V

= 50V, RG = 25Ω, Starting TJ = +25°C.

dd

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(th)VDS

Gate–Source Leakage, Forward I
Gate–Source Leakage, Reverse I
Zero Gate Voltage Drain Current I

On–State Drain–Source Current I
Static Drain–Source On–State

D(on)

R

DS(on)VGS

Resistance
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t
Total Gate Charge

(Gate–Source Plus Gate–Drain)
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q

DSSVGS

GSS
GSS
DSS

VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VDS = Max. Rating, VGS = 0V – – 250 µA
VDS = Max. Rating x 0.8, VGS = 0V,

T
VDS > I

VDS ≥ 50V, ID = 3A, Note 1 2.9 4.4 – mhos

fs

VGS = 0V, VDS = 25V, f = 1MHz – 780 – pF

iss
oss
rss

VDD = 0.5BV
(MOSFET switching times are essentially

r

independent of operating temperature)

independent of operating temperature)

f

Q

VGS = 10V, ID = 5.5A, VDS = 0.8 Max. Rating

g

(Gate charge is essentially independent of
operating temperature)

gs
gd

= 0V, ID = 250µA 400 – – V
= VGS, ID = 250µA 2.0 – 4.0 V

– – 1000 µA

= +125°C

C

D(on)

x R

max, VGS = 10V, Note 1 4.5 – – A

DS(on)

= 10V, ID = 3A, Note 1 – 1.0 1.5 Ω

– 99 – pF
– 43 – pF

, ID = 5.5A, ZO = 12Ω

DSS

– 11 17 ns
– 19 29 ns
– 37 56 ns
– 16 24 ns
– 18 30 nC

– 40 – nC
– 14 – nC

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Source–Drain Diode Ratings and Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Continuous Source Current (Body Diode) I
Pulse Source Current (Body Diode) I
Diode Forward Voltage V
Reverse Recovery Time t

S

Note 2 – – 18 A

SM

TC = +25°C, IS = 4.5A, VGS = 0V – – 1.6 V

SD

TJ = +25°C, IF = 5.5A, dIF/dt = 100A/µs – 310 660 ns

rr

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.

– – 4.5 A