NTE NTE66 Datasheet
NTE66
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Description:
The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (TJ = +25°C to +150°C), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I
Pulsed Drain Current (Note 2), I
Pulsed Gate Current, I
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), R
DS(ON)
DSS
= 1MΩ, TJ = +25°C to +125°C), V
GS
GS
D
DGR
TC = +25°C 14A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DM
GM
AS
AS
= +25°C), P
C
D
Derate Above 25°C 0.62W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . . . . . . .
1.62K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CS
0.5K/W.
Θ
stg
J
L
Θ
JC
Θ
JA
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
56A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
69mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
77W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 0.53mH, V
= 25V, RG = 25Ω, Starting TJ = +25°C.
dd
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(th)VDS
Gate–Source Leakage, Forward I
Gate–Source Leakage, Reverse I
Zero Gate Voltage Drain Current I
On–State Drain–Source Current I
Static Drain–Source On–State
D(on)
R
DS(on)VGS
Resistance
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
d(on)
Rise Time t
Turn–Off Delay Time t
d(off)
Fall Time t
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
DSSVGS
GSS
GSS
DSS
fs
iss
oss
rss
r
f
Q
g
gs
gd
= 0V, ID = 250µA 100 – – V
= VGS, ID = 250µA 2.0 – 4.0 V
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VDS = Max. Rating, VGS = 0V – – 250 µA
VDS = Max. Rating x 0.8, VGS = 0V,
= +125°C
T
C
VDS > I
D(on)
x R
max, VGS = 10V, Note 1 14 – – A
DS(on)
– – 1000 µA
= 10V, ID = 8.3A, Note 1 – 0.10 0.16 Ω
VDS ≥ 50V, ID = 8.3A, Note 1 5.1 7.6 – mhos
VGS = 0V, VDS = 25V, f = 1MHz – 640 – pF
– 240 – pF
– 72 – pF
VDD = 0.5BV
, ID = 8.3A, ZO = 12Ω
DSS
(MOSFET switching times are essentially
independent of operating temperature)
independent of operating temperature)
– 10 15 ns
– 34 51 ns
– 23 35 ns
– 24 36 ns
VGS = 10V, ID = 14A, VDS = 0.8 Max. Rating
– 17 26 nC
(Gate charge is essentially independent of
operating temperature)
– 3.7 5.5 nC
– 7 11 nC
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Source–Drain Diode Ratings and Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Source Current (Body Diode) I
Pulse Source Current (Body Diode) I
Diode Forward Voltage V
Reverse Recovery Time t
S
Note 2 – – 56 A
SM
TC = +25°C, IS = 14A, VGS = 0V – – 2.5 V
SD
TJ = +25°C, IF = 14A, dIF/dt = 100A/µs – 120 250 ns
rr
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
– – 14 A
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