NTE NTE6507 Datasheet

NTE6507

Integrated Circuit

NMOS, 8 Bit Microprocessor (MPU)

w

/On–Chip Clock OSC

Description:

The NTE6507 integrated circuit is an 8 bit microprocessor in a 28–Lead DIP type package which pro­vides a selection of addressable memory range, interrupt input options, and on–chip clock oscillators
and drivers. This device is bus compatible with the MC6800 product offering and is aimed at high
performance, low cost applications where single phase inputs or crystals provide the time base.

Features:

D Single 5V ±5% Power Supply
D N Channel, Silicon Gate, Depletion Load

Technology

D 8 Bit Parallel Processing
D Decimal and Binary Arithmetic
D Thirteen Addressing Modes
D True Indexing Capability
D Programmable Stack Pointer
D Variable Length Stack

D Bi–Directional Data Bus
D Instruction Decoding and Control
D 8k Addressable Bytes of Memory
D “Ready” Input
D Direct Memory Access Capability
D Bus Compatible with MC6800
D On–Board Clock
D 1MHz Operating Frequency

Absolute Maximum Ratings:

Supply Voltage, V
Input Voltage, V
Operating Temperature Range, T
Storage Temperature Range, T

Note 1. This device contains input protection against damage due to high static voltages or electric

fields; however , precautions should be taken to avoid application of voltages higher than the
maximum rating.

CC

in

(Note 1)

A

stg

–0.3 to +7.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–0.3 to +7.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0 to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Characteristics: (VCC = 5V ±5%, TA = 0° to +70°C unless otherwise specified)

Parameter Symbol Test Conditions Min Max Unit

Input High Voltage

Logic and ∅

o(in)

V

IH

+2.0 V

CC

Logic VCC–0.5 VCC+0.25 V

Input Low Voltage

Logic and ∅

o(in)

Input Loading

RDY

Input Leakage Current

Logic (Excluding RDY)

∅

o(in)

Three–State (Off State) Input Current

DB0–DB7

Output High Voltage

DB0–DB7, A0–A15, R/W

Output Low Voltage

DB0–DB7, A0–A15, R/W
Power Dissipation P
Capaticance

, RDY, C

RES

V

IL

–0.3 +0.8 V

I

Vin = 0V, VCC = 5.25V

IL

–10 –300 µA

I

Vin = 0 to 5.25V, VCC = 0

in

– 2.5 µA
– 10.0 µA

I

TSI

Vin = 0.4 to 2.4V, VCC = 5.25V

– ±10 µA

V

OH

I

= –100µA, VCC = 4.75V

LOAD

2.4 – V

V

OL

I

= 1.6mA, VCC = 4.75V

LOAD

– 0.4 V

VCC = 5.25V – 700 mW

D

Vin = 0, TA = +25°C, f = 1MHz

in

– 10 pF

DB0–DB7 – 15 pF

V

A0–A15, R/W C

∅

o(in)

C

O

out

o(in)

– 12 pF
– 15 pF

Dynamic Operating Characteristics: (VCC = 5V ±5%, TA = 0° to +70°C unless otherwise specified)

Parameter Symbol Test Conditions Min Max Unit

Cycle Time T

∅

Low Time T

o(in)

∅

High Time T

o(in)

∅o Neg to ∅1 Pos Delay T
∅o Neg to ∅2 Neg Delay T
∅o Pos to ∅1 Neg Delay T
∅o Pos to ∅2 Pos Delay T
∅

Rise and Fall Time TRO, T

α

(in)

∅
∅

Delay Between ∅1 and ∅

1(OUT)

2(OUT)

Pulse Width
Pulse Width

2

T
T

CYC

L∅o

H∅o

01+
02–
01–
02+

PWHO

PWHO

T

D

∅1 and ∅2 Rise and Fall Times TR, T

Note 2 480 – ns
Note 2 460 – ns
Load = 100pF 10 70 ns
Load = 100pF 5 65 ns
Load = 100pF 5 65 ns
Load = 100pF 15 75 ns
Note 3 0 30 ns

FO

1

2

Load = 1TTL load +30pF, Note 3 – 25 ns

F

1.00 40 µs

T

–20

LO

o

T

LO

o

–40 T

T

LO

o

–10

LO

o

5 – ns

ns
ns

Note 2. Measured at 50% points.
Note 3. Measured between 10% and 90% points.