NTE NTE65 Datasheet

NTE65

Silicon NPN Transistor

High Voltage, Low Noise for CATV, MATV

Description:

The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal
amplifier and also used in applications requiring fast switching times.

Features:

D High Current–Gain Bandwidth Product
D Low Noise Figure
D High Power Gain

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CBO

EBO

C

= +60°C), P

A

D

Derate Above 60°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

Thremal Resistance, Junction–to–Ambient, R

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

180mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

ON Characteristics

DC Current Gain h

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

FE

= 1mA, IB = 0 15 – – V
= 0.1mA, IE = 0 20 – – V
= 0.1mA, IC = 0 3 – – V

VCB = 10V, IE = 0 – – 50 nA

VCE = 10V, IC = 14mA 25 – 250

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Current–Gain Bandwidth Product f
Collector–Base Capacitance C

Functional Tests

Noise Figure NF VCE = 10V, IC = 2mA, f = 0.5GHz – 2.4 – dB

Power Gain at Optimum Noise Figure G

Maximum Available Power Gain

(Note 1)

2

|

|S

Note 1.

G

max

=

(I – |S11|2) (I – |S22|2)

21

T
cb

NF

G

max

VCE = 10V, IC = 14mA, f = 0.5GHz – 5.0 – GHz
VCB = 10V, IE = 0, f = 1MHz – 0.5 1.0 pF

VCE = 10V, IC = 2mA, f = 1.0GHz – 3.0 – dB
VCE = 10V, IC = 2mA, f = 0.5GHz – 15 – dB
VCE = 10V, IC = 2mA, f = 1.0GHz – 10 – dB
VCE = 10V, IC = 2mA, f = 0.5GHz – 18 – dB
VCE = 10V, IC = 2mA, f = 1.0GHz – 12 – dB

.005 (0.15)

.098 (2.5)

.197
(5.0)

Collector Base

Emitter

.205 (5.2) Dia Max

.039 (1.0)

.147

(3.75)

Max

.197 5.0).354 (9.0)