NTE NTE65 Datasheet
NTE65
Silicon NPN Transistor
High Voltage, Low Noise for CATV, MATV
Description:
The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal
amplifier and also used in applications requiring fast switching times.
Features:
D High Current–Gain Bandwidth Product
D Low Noise Figure
D High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
CEO
CBO
EBO
C
= +60°C), P
A
D
Derate Above 60°C 2.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
Thremal Resistance, Junction–to–Ambient, R
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
ON Characteristics
DC Current Gain h
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
FE
= 1mA, IB = 0 15 – – V
= 0.1mA, IE = 0 20 – – V
= 0.1mA, IC = 0 3 – – V
VCB = 10V, IE = 0 – – 50 nA
VCE = 10V, IC = 14mA 25 – 250
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Current–Gain Bandwidth Product f
Collector–Base Capacitance C
Functional Tests
Noise Figure NF VCE = 10V, IC = 2mA, f = 0.5GHz – 2.4 – dB
Power Gain at Optimum Noise Figure G
Maximum Available Power Gain
(Note 1)
2
|
|S
Note 1.
G
max
=
(I – |S11|2) (I – |S22|2)
21
T
cb
NF
G
max
VCE = 10V, IC = 14mA, f = 0.5GHz – 5.0 – GHz
VCB = 10V, IE = 0, f = 1MHz – 0.5 1.0 pF
VCE = 10V, IC = 2mA, f = 1.0GHz – 3.0 – dB
VCE = 10V, IC = 2mA, f = 0.5GHz – 15 – dB
VCE = 10V, IC = 2mA, f = 1.0GHz – 10 – dB
VCE = 10V, IC = 2mA, f = 0.5GHz – 18 – dB
VCE = 10V, IC = 2mA, f = 1.0GHz – 12 – dB
.005 (0.15)
.098 (2.5)
.197
(5.0)
Collector Base
Emitter
.205 (5.2) Dia Max
.039 (1.0)
.147
(3.75)
Max
.197 5.0).354 (9.0)
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