NTE NTE6410 Datasheet

NTE6410

Unijunction Transistor (UJT)

Description:

The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and
timing circuits, sensing circuits and thyristor trigger circuits.

Absolute Maximum Ratings: (TA = +25°C unless other specified)
RMS Power Dissipation, P

D

Derate Above 25°C 3.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS Emitter Current, I
Peak–Pulse Emitter Current (Note 1), I
Emitter Reverse Voltage, V
Interbase Voltage (Note 2), V

E

E

B2E

B2B1

Operating Junction Temperature Range, TJ –65° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Note 1. Duty cycle ≤ 1%, PRR = 10 PPS
Note 2. Based upon power dissipation at TA = +25°C

Electrical Characteristics: (TA = +25°C unless other specified)

Parameter Symbol Test Conditions Min Typ Max Unit

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Intrinsic Standoff Ratio
Interbase Resistance R
Interbase Resistance Temperature Coefficient αR
Emitter Saturation Voltage V
Modulated Interbase Current I
Emitter Reverse Current I
Peak–Point Emitter Current I
Valley–Point Current I
Base–One Peak Pulse Voltage V

BE1(sat)VB2B1

B2(Mod)VB2B1

EB2O

η

OB1

BB

P
V

BB

V

= 10V, Note 3 0.70 – 0.85

B2B1

4.0 6.0 9.1 kΩ

0.1 – 0.9 %/°C

= 10V, IE = 50mA, Note 4 – 2.5 – V

= 10V, IE = 50mA – 15 – mA

V

= 30V, IB1 = 0 – 0.005 1.0 µA

B2E

V

= 25V – 1.0 5.0 µA

B2B1

V

= 20V, RB2 = 100Ω, Note 4 4.0 7.0 – mA

B2B1

5.0 8.0 – V

Note 3. Intrinsic standoff ratio, is defined in terms of peak–point voltage, VP, by means of the equa-

tion: VP = η V

VF, where VF is approximately 0.49 volts at +25°C @ IF = 10µA and de-

B2B1

creases with temperature at approximately 2.5mV/°C. Components R1, C1, and the UJT
form a relaxation oscillator, the remaining circuitry serves as a peak–voltage detector. The
forward drop of Diode D1 compensates for VF. To use, the “call” button is pushed, and R
is adjusted to make the current meter, M1, read full scale. When the “call” button is released,
the value of η is read directly from the meter, if full scale on the meter reads 1.0.

Note 4. Use pulse techniques: PW ∼ 300µs, duty cycle ≤ 2.0% to avoid internal heating, which may

result in erroneous readings.

3

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

.021 (.445) Dia Max

B E B2

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max