NTE NTE6402 Datasheet
NTE6402
Programmable Unijunction Transistor (PUT)
Description:
The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic
low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and
cathode.
This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many
advantages over conventional unijunction transistors. The designer can select R1 and R2 to program
unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peak–point emitter
current, and valley–point current to meet his particular needs.
PUT’s are specifically charactrized for long interval timers and other applications requiring low leakage and low peak point current. PUT’s similar types have been characterized
Applications:
D SCR Trigger
D Pulse and Timing Circuits
D Oscillators
D Sensing Circuits
D Sweep Circits
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Gate–Cathode Forward Voltage +40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Cathode Reverse Voltage –5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Anode Reverse Voltage +40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Anode–Cathode Voltage ±40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Anode Current (Note 1) 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Anode, Recurrent Forward Current
Pulse Width = 100µs, Duty Cycle = 1% 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse Width = 20µs, Duty Cycle = 1% 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Anode, Non–Recurrent Forward Current (10µs) ±20mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Capacitive Discharge Energy (Note 2) 250µJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Average Power (Note 1) 300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range (Note 1) –50° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Derate currents and powers 1%/°C above 25°C.
Note 2. E = 1/2 CV2 capacitor discharge energy with no current limiting.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Current I
Offset Voltage V
Valley Current I
Anode Gate–Anode Leakage Current I
Gate–Cathode Leakage Current I
GAO
GKS
Forward Voltage V
Pulse Output Voltage V
Pulse Voltage Rate of Rise t
VS = 10V, RG = 1MΩ – – 2 µA
P
VS = 10V, RG = 10kΩ – – 5 µA
VS = 10V, RG = 1MΩ 0.2 – 1.6 V
T
VS = 10V, RG = 10kΩ 0.2 – 0.6 V
VS = 10V, RG = 1MΩ – – 50 µA
V
VS = 10V, RG = 10kΩ 70 – – µA
VS = 10V, RG = 200Ω 1.5 – – mA
VS = 40V, TA = +25°C – – 10 nA
VS = 40V, TA = +75°C – – 100 nA
VS = 40V, Anode–Cathode Short – – 100 nA
IF = 50mA – – 1.5 V
F
O
r
6 – – V
– – 80 ns
.210
(5.33)
Max
.500
(12.7)
Min
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
A G K
.135 (3.45) Min
Seating
Plane
.021 (.445)
Dia Max
.050 (1.27)
.165 (4.2) Max
.105 (2.67) Max
.245
(6.23)
Max
.500
(12.7)
Min
.100 (2.54)
.140 (3.55) Max
.190 (4.82) Min
.065
(1.65)
.018 (0.45) Dia Max
A G K
.200 (5.08) Max
TO92 TO98
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