NTE NTE6400A, NTE6400 Datasheet

NTE6400 & NTE6400A

Unijunction Transistor

Description:

The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable
“N” type negative resistance characteristic over a wide temperature range. A stable peak point volt­age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,
timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven­tional silicon or germanium transistors.

These devices are intended for applications where circuit economy is of primary importance.

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
RMS Power Dissipation, P

Unstabilized 450mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Stabilized 600mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 3.9mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS Emitter Current, I
Peak Emitter Current (TJ = +150°C), I

Emitter Reverse Voltage (TJ = +150°C) 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Interbase Voltage, V

BB

NTE6400 35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE6400A 55V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Temperature Range, T

Unstabilized –65° to +140°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Stabilized –65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R

D

E

E(peak)

opr

stg

thJC

–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.16°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Intrinsic Standoff Ratio

NTE6400

NTE6400A
Interbase Resistance R
Modulated Interbase Current I
Emitter Reverse Current

NTE6400

NTE6400A
Peak Point Emitter Current I
Valley Point Current I
Base–One Peak Pulse Voltage V

η VBB = 10V, Note 1

BBO

B2(MOD)VBB

I

EO

P
V

OB1

VBB = 3V, IE = 0, Note 1 4 – 12

= 10V, IE = 50mA 6.8 – 30 mA

V

= 30V, IB1 = 0

B2E

VBB = 25V – – 25 µA
VBB = 20V, RB2 = 100Ω

0.4
54

–
–

8 – – mA
3 – – V

–

0.80

–

0.67

–
–

12

1

kΩ

µA

Note 1. The intristic standoff ratio, η, is essentially constant with temperature and interbase volt-

age. It is defined by the following equation:

VP = η VBB +

200

T

j

Where VP= Peak point emitter voltage

VBB= Interbase voltage
Tj= Junction Temperature (Degrees Kelvin)

Note 2. The interbase resistance is nearly ohmic and increases with temperature in a well–defined

manner. The temperature coefficient at +25°C is approximately 0.8%/°C.

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.260 (6.6)

Max

.500 (12.7)

Min

B2

45°

.018 (0.45) Dia

.210 (5.33) Dia Max

B1

Emitter

.031 (.793)