NTE NTE64 Datasheet
NTE64
Silicon NPN Transistor
UHF High Speed Switch
Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise small–signal amplifiers and applications requiring fast switching times.
Features:
D High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA
D Low Noise Figure: NF = 2dB Typ @ f = 1GHz
D High Power Gain: G
= 10dB Min @ f = 1GHz
pe
D Third Order Intercept: +23dBm Typ
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
CEO
CBO
EBO
C
= +25°C), P
C
30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
Derate Above 25°C 3.3mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
(TC = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
0.375W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
= 1mA, IB = 0 15 – – V
= 0.1mA, IE = 0 25 – – V
= 0.1mA, IC = 0 2 – – V
VCB = 15V, IE = 0 – – 50 nA
300°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
FE
IC = 5mA, VCE = 5V 30 80 200
Dynamic Characteristics
Current Gain–Bandwidth Product f
T
IC = 15mA, VCE = 10V,
– 4.5 – GHz
f = 1GHz
Collector–Base Capacitance C
cb
VCB = 10V, IE = 0, f = 1MHz – 0.4 1.0 pF
Noise Figure NF IC = 5mA, VCE = 6V, f = 1GHz – 2.0 2.5 dB
Functional Tests
Common–Emitter Amplifier Power Gain G
pe
Third Order Intercept IC = 5mA, VCE = 6V,
VCC = 6V, IC = 5mA, f = 1GHz 10 12 – dB
– +23 – dBm
f = 0.9GHz
.075 (1.9) Min
C
.770
(19.5)
Max
EE
.325
(8.27)
Max
B
.036 (0.92)
Seating Plane
.190
(4.83)
Dia
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