NTE NTE630, NTE629 Datasheet

NTE629 & NTE630

Silicon Rectifier

Fast Recovery, Dual, Center Tap

Description:

The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed
for special applications such as DC power supplies, inverters, converters, ultrasonic systems, chop­pers and low RF interference.

Features:

D Low Forward Voltage
D High Current Capability
D Fast Switching for High Efficiency
D High Surge Capacity
D Glass Passivated Chip Junction

Absolute Maximum Ratings:

Peak Repetitive Reverse Voltage, V

NTE629 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE630 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Working Peak Reverse Voltage, V

NTE629 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE630 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DC Blocking Voltage, V

R

NTE629 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE630 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS Reverse Voltage, V

R(RMS)

NTE629 140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE630 420V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Average Rectifier Forward Current (Rated VR, TC = +150°C), I

Per Diode 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Non–Repetitive Peak Surge Current, I

(8.3ms Single half Sine–Wave Superimposed on Rated Load) 250A. . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range (Reverse Voltage Applied), T
Storage Temperature Range (Reverse Voltage Applied), T

RRM

RWM

FSM

stg

F(AV)

J

–65° to +175°C. . . . . . . . . .

–65° to +175°C. . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Instantaneous Forward Voltage V
Instantaneous Reverse Current I

Junction Capacitance C
Reverse Recovery Time

NTE629

NTE630 – – 250 ns

t

IF = 8A – – 1.3 V

F

At Rated VR, TC = +25°C – – 10 µA

R

At Rated VR, TC = +100°C – – 250 µA
Note 1 – 50 – pF

P

IF = 0.5A, IR = 1A, irr = 0.25A – – 150 ns

rr

Note 1. Measured at 1MHz and applied reverse voltage of 4V.

.147 (3.75) Dia Max .185 (4.7)

.392

(9.95)

.245 (6.22)

.054 (1.38).110 (2.79)

.608

(15.42)

Max

.500

(12.7)

Min

K

.040 (1.02)

AA

K

.100 (52.54)

.018 (0.48)