NTE NTE63 Datasheet

NTE63

Silicon NPN Transistor

High Gain, Low Noise Amp

Description:

The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.

Features:

D High Current Gain–Bandwidth Product: fT = 5GHz Typ @ f = 1GHz
D High Power Gain: G

= 12.5dB Min @ f = 1GHz

pe

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T

CEO

CBO

EBO

C

= +50°C), P

L

40mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

Derate Above 50°C 4.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Lead, R

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(TC = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJL

= 1mA, IB = 0 12 – – V
= 0.1mA, IE = 0 20 – – V
= 0.1mA, IC = 0 2 – – V

VCB = 15V, IE = 0 – – 50 nA

12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Dynamic Characteristics

Current Gain–Bandwidth Product f

Collector–Base Capacitance C

Functional Tests

Noise Figure NF

Power Gain at Optimum Noise Figure G

Maximum Available Power Gain

(Note 1)

Note1.G

= |S21|2 / (I – |S11|2) (I – |S22|2)

max

FE

T

cb

MINIC

NF

G

maxIC

IC = 30mA, VCE = 10V 30 – 200

IC = 30mA, VCE = 10V,

– 5.0 – GHz

f = 1GHz
VCB = 10V, IE = 0, f = 1MHz – 0.6 1.0 pF

= 5mA, VCE = 10V, f = 1GHz – 2.5 – dB
IC = 5mA, VCE = 10V, f = 2GHz – 4.0 – dB
IC = 5mA, VCE = 10V, f = 1GHz – 10 – dB
IC = 5mA, VCE = 10V, f = 2GHz – 6 – dB

= 30mA, VCE = 10V, f = 1GHz – 12.5 – dB
IC = 30mA, VCE = 10V, f = 2GHz – 7.5 – dB

.075 (1.9) Min

C

.770

(19.5)

Max

EE

.325

(8.27)

Max

B

.036 (0.92)

Seating Plane

.190

(4.83)

Dia