NTE6248
Silicon Schottky Barrier Rectifier
Features:
D Guarding for Stress Protection
D Low Forward Voltage
D High Current Capability
D High Surge Capability
Maximum Ratings and Electrical Characteristics:
(TA = +25°C unless otherwise specified. Resistive or inductive load.)
Maximum Recurrent Peak Reverse Voltage, V
Maximum RMS Voltage, V
Maximum DC Blocking Voltage, V
RMS
DC
Maximum Average Rectified Forward Current (T
Peak Forward Surge Current, I
FSM
(8.3ms single half sine–wave superimposed on rated load) 250A. . . . . . . . . . . . . . . . . . . . . . .
Maximum Instantaneous Forward Voltage (I
Maximum DC Reverse Current (rated DC Blocking Voltage), I
TC = +25°C 10µA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100°C 500µA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Maximum Reverse Recovery Time (T
= +25°C, Note 1), T
J
Typical Junction Capacitance (Note 2), C
Typical Thermal Resistance, Junction–to–Case, R
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
= 16A), V
F
J
J
RRM
= +100°C), I
C
thJC
F(AV)
F
R
RR
600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
420V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16A. . . . . . . . . . . . . . . . . . . . . . .
1.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50ns. . . . . . . . . . . . . . . . . . . . . . . . . . .
145pF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Reverse Recovery Test Conditions: I
= 500mA, IR = 1A, recover to 250mA.
F
Note 2. Measured at 1MHz and applied reverse voltage of 4V.