NTE NTE6234 Datasheet

NTE6234

Powerblock Module

Description:

The NTE6234 u s es 2 high voltage power diodes in series and the semiconductors a re electrically
isolated f rom the m etal base, a l lowing common h eatsi nks a nd compact assemblies t o be b uilt. This
device is i ntended for general purpose applications such as battery chargers, welders and pl ati ng
equipment and where high voltage and high current are required.

Features:

D High Voltage
D Electrically Isolated Base Plate
D 3000V
D High Surge Capability
D Large Creepage Distances

Ratings and Characteristics:

Average Forward Current (TC = +100°C, 180° Conduction, Half Sine Wave), I
Maximum RMS Forward Current (As AC Switch), I
Maximum Repetitive Peak Reverse Voltage, V
Maximum Non–Repetitive Peak Reverse Voltage, V
Maximum Peak Reverse Current (TJ = +150°C), I
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), R
Thermal Resistance, Case–to–Sink (Per Module, Note 1), R

Isolating Voltage

RMS

stg

F(AV)

T(RMS)

RRM

RSM

RRM

ISO

J

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

195A. . . . . . . . .

305A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3000V. . . . . . . .

–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

thCS

0.20°C/W. . . . . . . . . . .

0.035°C/W. . . . . . . . . . . . . . . . . . .

Note 1. Mounting surface flat, smooth and greased.

Electrical Specifications:

Parameter Symbol Test Conditions Rating Unit

Maximum Peak One–Cycle I

Non–Repetitive Surge Current

FSM

t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms

Sinusoidal Half Wave, 100% V
Reapplied, Initial TJ = +150°C

Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +150°C

RRM

4000 A
4200 A
4750 A
4980 A

Electrical Specifications (Cont’d):

Parameter Symbol Test Conditions Rating Unit

Maximum I2t for Fusing I2t

Maximum I2pt I2pt
Threshold Voltage, Low level V
Threshold Voltage, High level V
Forward Slope Resistance, Low Level r
Forward Slope Resistance, High Level r
Maximum Forward Voltage Drop V

F(TO)1TJ
F(TO)2TJ

f1
f2

FM

AC

t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms

Sinusoidal Half Wave, 100% V

RRM

Reapplied, Initial TJ = +150°C
Sinusoidal Half Wave, No Voltage

Reapplied, Initial TJ = +150°C

80 kA2s

73 kA2s
113 kA2s
103 kA2s

t = 0.1 to 10ms, no voltage reapplied 1 130

= +150°C, (16.7% x π x I
= +150°C, (π x I

< I < 20 x π x I

T(AV)

TJ = +150°C, (16.7% x π x I
TJ = +150°C, (π x I
TJ = +25°C, IFM = π x I

Av. Power = V

F(TO)

< I < 20 x π x I

T(AV)

F(AV)

x I

T(AV)

< I < π x I

T(AV)

< I < π x I

T(AV)

,

+ rf x (I

T(AV)

T(AV)

F(RMS)

) 0.75 V

T(AV)

) 0.86 V

) 0.92 mΩ

T(AV)

) 0.77 mΩ

1.32 V

2

)

Circuit Diagram

+ –

K2 G2

+

kA2pt

.244 (6.2) Dia
(2 Places)

.270 (7.0)

M6 x 1 Screw (3 Places)

1.180
(30.0)

AC

.980 (25.0) .980 (25.0)

3.150 (80.0)

–

K1 G1

1.340
(34.0)

1.850
(47.0)

3.700 (94.0)