NTE NTE6232 Datasheet

NTE6232
Powerblock Module
Description:
The NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from the metal base, allowing c ommon heatsinks and c ompact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required.
Features:
Ratings and Characteristics:
Average Forward Current (TC = +92°C, 180° Conduction, Half Sine Wave), I Maximum RMS On–State Current, I Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, V Maximum Non–Repetitive Peak Reverse Voltage, V Maximum Peak Reverse Current (TJ = +125°C), I RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V Operating Junction Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction–to–Case (Per Module, DC Operation), R Thermal Resistance, Case–to–Sink (Note 1), R
Isolating Voltage
RMS
stg
T(RMS)
F(AV)
100A. . . . . . . . . .
141A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
RRM
RSM
RRM
J
DRM
ISO
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1600V. . . . . . . .
1700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3500V. . . . . . . .
–40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
thCS
0.22°C/W. . . . . . . . . . .
0.1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Peak One–Cycle I
Non–Repetitive Surge Current
FSM
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
Sinusoidal Half Wave, 100% V Reapplied, Initial TJ = +150°C
Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +150°C
RRM
1700 A 1780 A 2020 A 2110 A
Electrical Specifications (Cont’d):
Parameter Symbol Test Conditions Rating Unit
Maximum I2t for Fusing I2t
Maximum I2pt I2pt Threshold Voltage, Low level V Threshold Voltage, High level V Forward Slope Resistance, Low Level r Forward Slope Resistance, High Level r Maximum Forward Voltage Drop V
F(TO)1TJ F(TO)2TJ
f1 f2
FM
AC
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
Sinusoidal Half Wave, 100% V Reapplied, Initial TJ = +150°C
Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +150°C
RRM
14450 A2s 13190 A2s 20430 A2s 18650 A2s
t = 0.1 to 10ms, no voltage reapplied 204300
= +150°C, (16.7% x π x I = +150°C, (π x I
< I < 20 x π x I
T(AV)
TJ = +150°C, (16.7% x π x I TJ = +150°C, (π x I TJ = +25°C, IFM = π x I
Av. Power = V
F(TO)
< I < 20 x π x I
T(AV)
F(AV)
x I
T(AV)
< I < π x I
T(AV)
< I < π x I
T(AV)
,
+ rf x (I
T(AV)
T(AV)
F(RMS)
) 0.66 V
T(AV)
) 0.74 V
) 1.81 m
T(AV)
) 1.57 m
1.3 V
2
)
Circuit Diagram
+
A2pt
.787
(20.0)
.550 (14.0)
.393
(10.0)
M5 Screw (3 Places)
1.180 (30.0)
AC +
.787 (20.0)
.787
(20.0)
3.150 (80.0)
.244 (6.2) Dia
1.195
(30.0)
3.620 (91.9)
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