NTE NTE617 Datasheet

NTE617
Varactor Diode
Description:
Features:
D High Figure of Merit: Q = 140 (Typ) @ VR = 3V, f = 100MHz D Guaranteed Capacitance Range: 34 – 39pF @ VR = 3V D Dual Diodes – Save Space and Reduce Cost D Monolithic Chip Provides Near Perfect Matching: Guaranteed ±1% (Max) Over Specified
Tuning Range
Absolute Maximum Ratings (Each Device):
Reverse Voltage, V Forward Current, I
R
F
Total Power Dissipation (TA = +25°C), P
Derate Above 25°C 2.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T Storage Temperature Range, T
J
stg
D
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
280mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics (Each Device): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Breakdown Voltage BV Reverse Voltage Leakage Current I
Series Inductance L Case Capacitance C Diode Capactance Temperature
Coefficient Diode Capacitance C Figure of Merit Q VR = 3V, f = 100MHz, Note 1 100 140 Capacitance Ratio C
TC
IR = 10µA 32 V
R
TA = +25°C VR = 30V 50 nA
R
TA = +60°C 500 nA f = 250MHz, Lead Length [ 1/16” 6 nH
S
f = 1M Hz, Lead Length [ 1/16” 0.18 pF
C
VR = 4V, f = 1MHz 280 400 ppm/°C
C
VR = 3V, f = 1MHz 34 39 pF
T
C3/C30, f = 1MHz 2.5 2.8
R
1
Note 1. Q =
2 π f CT R
S
.196 (5.0)
.519
(13.18)
.017 (0.43)
.196 (5.0)Dia
A1
.025 (0.63) Typ
A2K
.051 (1.29) Typ
.157 (4.0)
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