NTE NTE601 Datasheet

NTE601

Silicon Varistor

Temperature Compensating Diode

Features:

D High reliability planar chip and glass sealing
D Low I
D Large P

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Maximum Forward Current, IFM 150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Voltage, VR 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, PD 150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Junction Temperature, TJ +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T
Electrical Characteristics: (TA = +25°C unless otherwise specified)

R

D

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Parameter Symbol Test Conditions Min Typ Max Unit

Reverse Current I
Forward Voltage V

Forward Voltage Change with Respect to Temperature –∆VF/∆T IF = 1.5mA – 2.0 – mV/°C

.099 (2.51) Max

.022 (0.56) Max

.500 (12.7)

Min

Color Band Denotes Cathode

R

.118

(3.0)

Max

VR = 6V – – 10 µA
IF = 1.5mA 0.59 – 0.64 V

F

IF = 50mA – – 1.1 V

.099 (2.51) Max

.080 (2.03)
Dia Max

.500 (12.7)

Min