NTE NTE60, NTE61 Datasheet
NTE60 (NPN) & NTE61 (PNP)
Silicon Complementary Transistors
High Power Audio, Disk Head Positioner
for Linear Applications
Description:
The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D High Safe Operating Area: 250W @ 50V
D For Low Distortion Complementary Designs
D High DC Current Gain: h
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
Continuous Base Current, I
Continuous Emitter Current, I
Total Power Dissipation (T
Derate Above 25°C 1.43W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), T
Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
= 25 Min @ IC = 5A
FE
CEO(sus)
CBO
C
B
E
= +25°C), P
C
stg
D
J
thJC
140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
140V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.70°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+265°C. . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEX
I
CEO
EBO
= 200mA, IB = 0, Note 2 140 – – V
VCE = 140V, V
VCE = 140V, V
VCE = 140V, IB = 0 – – 250 µA
VEB = 5V, IC = 0 – – 100 µA
= 1.5V – – 100 µA
BE(off)
= 1.5V, TC = +150°C – – 2 mA
BE(off)
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Second Breakdown
Second Breakdown Collector Current
with Base Forward Bias
ON Characteristics
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter On Voltage V
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
CE(sat)IC
BE(on)
.135 (3.45) Max
.350 (8.89)
I
S/b
FE
VCE = 50V, t = 1s (non–repetitive) 5 – – µA
VCE = 100V, t = 1s (non–repetitive) 1 – – µA
VCE = 2V, IC = 5A 25 – 150
= 5A, IB = 500mA – – 1 V
VCE = 2V, IC = 5A
VCE = 10V, IC = 500mA, f
T
VCB = 10V, IE = 0, f
ob
–
= 0.5MHz 2 – – MHz
test
= 1MHz – – 1000 pF
test
– 2 V
.875 (22.2)
Dia Max
Seating
Plane
.215 (5.45)
.430
(10.92)
Emitter
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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