NTE NTE596 Datasheet
NTE596
Silicon Diode, Dual, Common Anode,
High Speed
Description:
The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes
are common and the device is intended for high–speed switching applications in thick and thin–film
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
Repetitive Peak Reverse Voltage, V
Non–Repetitive Peak Forward Current (Per device, t = 1s), I
R
RRM
FSM
Average Rectified Forward Current (Average over any 20ms period, Note 1), I
DC Forward Current, I
Repetitive Peak Forward Current, I
Total Power Dissipation (TA ≤ +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R
Thermal Resistance, Tab–to–Soldering Points, R
Thermal Resistance, Soldering Points–to–Ambient (Note 2), R
F
FRM
tot
J
stg
thJT
thTS
thSA
F(Av)
–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 x 280K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 x 90K/W. . . . . . . . . . . . . . . . .
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . .
250mA. . . . . .
250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Measur ed under pulse conditions: tp ≤ 0.5ms, I
= 150mA, t
F(AV)
≤ 1ms, for sinusoidal
(av)
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Voltage V
Reverse Current I
Diode Capacitance C
Forward Recovery Voltage
(When switched to I
= 10mA)
F
V
IF = 1mA – – 715 mV
F
IF = 10mA – – 855 mV
IF = 50mA – – 1000 mV
IF = 150mA – – 1250 mV
VR = 70V – – 2.5 µA
R
VR = 70V, TJ = +150°C – – 50 µA
VR = 0, f = 1MHz – – 2 pF
d
tr = 20ns – – 1.75 V
fr
Electrical Characteristics (Per Diode): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Recovery Time
(When switched from
= 10mA to IR = 10mA
I
F
Recovery Charge
(When switched from
= 10mA to VR = 5V
I
F
K
.016 (0.48)
A
K
Q
t
measured at IR = 1mA,
rr
s
= 100Ω
R
L
RL = 100Ω – – 45 pC
– – 6 ns
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.051
(1.3)
.043 (1.1)
.007 (0.2)
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