NTE NTE594 Datasheet

NTE594

Silicon Diode, Bandswitch

Description:

The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended
for thick and thin–film circuits.

Absolute Maximum Ratings:

Continuous Reverse Voltage, V
DC Forward Current, I

F

Total Power Dissipation (TA ≤ +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R

R

tot

J

stg

thJA

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

–55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

430K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Voltage V
Reverse Current I

Series Resistance r
Diode Capacitance C

.016 (0.48)

K

A

.074 (1.9)

.118 (3.0) Max

N.C.

IF = 100mA – – 1.2 V

F

VR = 20V – – 100 nA

R

VR = 20V, TJ = 60°C – – 1 µA
IF = 5mA – 0.5 0.7 Ω

D

VR = 20V, f = 1MHz – 0.8 1.0 pF

d

.098

(2.5)

Max

.037 (0.95)

.051
(1.3)

.007 (0.2)

.043 (1.1)