NTE NTE593 Datasheet

NTE593

Silicon Diode, High Speed Switch

Description:

The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This
device is intended for high–speed switching in hybrid thick–film circuits.

Absolute Maximum Ratings:

Continuous Reverse Voltage, V
Repetitive Peak Reverse Voltage, V
Non–Repetitive Peak Forward Current (t = 1s), I

R

RRM

FSM

Average Rectified Forward Current (Average over any 20ms period, Note 1), I
DC Forward Current (TA ≤ +25°C, Note 2), I
Repetitive Peak Forward Current, I

FRM

Total Power Dissipation (TA ≤ +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T

J

stg

Thermal Resistance, Junction–to–Ambient (Note 2), R

F

tot

thJA

F(Av)

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

85V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mA. . . . . .

250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

250mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

430K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Measur ed under pulse conditions: tp ≤ 0.5ms, I

= 150mA, t

F(AV)

≤ 1ms, for sinusoidal

(av)

operation.

Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Forward Voltage V

Reverse Current I

Diode Capacitance C
Reverse Recovery Time

(When switched from

= 30mA to IR = 30mA

I

F

Recovery Charge

(When switched from

= 10mA to VR = 5V

I

F

Q

t

IF = 1mA – – 715 mV

F

IF = 10mA – – 855 mV
IF = 50mA – – 1000 mV
IF = 150mA – – 1250 mV
VR = 75V – – 1 µA

R

VR = 75V, TJ = +150°C – – 50 µA
VR = 0, f = 1MHz – – 2 pF

d

measured at IR = 1mA,

rr

s

= 100Ω

R

L

RL = 100Ω – – 45 pC

– – 6 ns

.016 (0.48)

A

.074 (1.9)

.118 (3.0) Max

K

N.C.

.037 (0.95)

.007 (0.2)

.098
(2.5)
Max

.051
(1.3)

.043 (1.1)