NTE NTE5912, NTE5914, NTE5915, NTE5921, NTE5923 Datasheet

NTE5844 & NTE5845,

NTE5912 thru NTE5933

Silicon Power Rectifier Diode, 20 Amp

Description and Features:

The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma­chine tool controls.

Features:

D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style

Ratings and Characteristics:

Average Forward Current (TC = +140°C Max), I
Maximum Forward Surge Current (60Hz), I

F(AV)

FSM

Fusing Current (60Hz), I2t 493A2s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Fusing Current, I2pt 7640A2ps. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Reverse Recovery Voltage Range, V

RRM

50 to 1200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Voltage Ratings: (TJ = +175°C)

V

NTE Type Number

Cathode

to Case

Anode

to Case

–Max V

RRM

Repetitive Peak

Reverse Volt.

(V)

Non–Repetitive Peak

Reverse Voltage

5912 5913 50 75 50 – 12
5914 5915 100 150 100 – 12
5916 5917 200 275 200 – 12
5918 5919 300 385 300 – 12
5920 5921 400 500 400 500 12
5922 5923 500 613 50 613 12
5924 5925 600 725 600 725 12
5928 5929 800 950 800 950 12
5932 5933 1000 1200 1000 1200 12
5844 5845 1200 1400 1200 1350 12

–Max VR–Max. V

RSM

(V)

Direct Reverse

Voltage

(V)

Minimum Avalanche

R(SR)

Voltage

(V)

IRM–Max

Reverse Current

Rated V

(mA)

20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RRM

Electrical Specifications:

Parameter Symbol Test Conditions Rating Unit

Maximum Average Forward Current I
Maximum Peak One–Cycle I

F (AV)

FSM

Non–Repetitive Surge Current

Maximum I2t for Fusing I2t

Maximum I2t for Individual Device

Fusing

Maximum I2pt I2pt
Maximum Peak Forward Voltage V
Maximum Value of Threshold

FM

V

M (TO)TJ

Voltage

Maximum Value of Forward Slope

r

t

Resistance

Note 1. I2t for time tx = I2Ǩt S Ǩt

x

Thermal–Mechanical Specifications:

Parameter Symbol Test Conditions Rating Unit

180° sinusoidal condition, TC = +150°C Max 20 A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms

Sinusoidal Half Wave,
No voltage reapplied

100% rated voltage reapplied,
TJ = +175°C

No voltage reapplied,
Initial TJ = +175°C

100% rated voltage reapplied

400 A
425 A
437 A
462 A
540 A2s
493 A2s

765 A2s
t = 8.3ms 700 A2s
t = 0.1 to 10ms, No voltage reapplied, Note 1 7640

A2pt

IFM = 63A, TJ = +25°C 1.23 V

= +175°C 0.78 V

TJ = +175°C 7.55 mΩ

Maximum Operation Junction Temperature T
Maximum Storage Temperature T
Maximum Internal Thermal Resistance

R

J

stg

thJC

DC operation 1.6 K/W

–65 to + 175 °C
–65 to + 200 °C

Junction–to–Case

Thermal Resistance, Case–to–Sink R

thCS

Mounting surface flat, smooth and

0.25 K/W

greased

Mounting Torque T Non–lubricated threads 1.2 – 1.5

(10.5 – 13.5)

m•N

(in•lb)

Approximate Weight wt 11 (0.25) g (oz)

.437

.250 (6.35) Max

(11.1)

Max

.060 (1.52)

.175 (4.45) Max

Dia Min

10–32 NF–2A

.405

.424 (10.8)

Dia Max

(10.3)

Max

1.250 (31.75) Max

.453

(11.5)

Max